NXP Semiconductors - 934061275112

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Package Style (Meter): FLATPACK; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 165 Cel; Transistor Element Material: SILICON; No. of Terminals: 2;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: FLAT;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40; JESD-609 Code: e3; Terminal Finish: TIN;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Terminal Form: FLAT; Transistor Application: AMPLIFIER;

STMicroelectronics PD55025-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, ideal for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND, with 7A Drain Current and 79W Power Dissipation. Package: PLASTIC/EPOXY, GULL WING terminals, SMALL OUTLINE style.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; Transistor Application: SWITCHING; Package Style (Meter): CHIP CARRIER;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Maximum Drain Current (Abs) (ID): 15 A; Minimum DS Breakdown Voltage: 50 V;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER; Operating Mode: ENHANCEMENT MODE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 2; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 317 W; Terminal Finish: TIN; No. of Elements: 1;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Minimum DS Breakdown Voltage: 65 V; Terminal Form: FLAT;

RF Power Field-Effect Transistors;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Style (Meter): FLATPACK; Terminal Form: FLAT; Operating Mode: ENHANCEMENT MODE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Terminal Position: DUAL; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Maximum Feedback Capacitance (Crss): .186 pF; Operating Mode: DEPLETION MODE;