New Jersey Semiconductor Products - 2N2219A

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): 1 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Maximum Turn On Time (ton): 70 ns;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .5 A; Maximum Collector-Emitter Voltage: 45 V;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 65 V;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): .03 A; Additional Features: LOW NOISE;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;

MMBT3904LT1G by Onsemi is a NPN BJT with max. collector-emitter voltage of 40V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its compact size, high transition frequency, and low power dissipation capabilities.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;

Nexperia's MMBT3906VL is a PNP BJT transistor with hFE of 30, VCEO of 40V, and ton of 70ns. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and high transition frequency of 250MHz.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .2 A;

BC857BS,115 by NXP Semiconductors is a PNP BJT transistor with 2 elements for switching applications. It has a hFE of 200, VCEO of 45V, and IC of 0.1A. This surface-mount transistor operates up to 150°C and has a transition frequency of 100MHz.

BC846BW-7-F by Diodes Inc. is a NPN small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 65V and a max collector current of 0.1A. It is commonly used for switching applications due to its high DC current gain (hFE) of 200 and fast nominal transition frequency (fT) of 300MHz.