12LRS155C by Murata Manufacturing | Vyrian | Semiconductor & Electronic Component Distributor

Image shown is a representation only.

Manufacturer	Murata Manufacturing
Manufacturer's Part Number	12LRS155C
Description	GENERAL PURPOSE INDUCTOR; No. of Terminals: 4; Package Style (Meter): Radial; Shielded: YES; Surface Mount: NO; Package Width: 10.5 mm;
Datasheet	12LRS155C Datasheet

NAME	DESCRIPTION
Construction:	Cylindrical
Shape or Size Description:	CYLINDRICAL PACKAGE
Packing Method:	Bulk
Tolerance:	15 %
Package Length:	10.5 mm
Surface Mount:	NO
Minimum Operating Temperature:	-40 Cel
Inductor Type:	GENERAL PURPOSE INDUCTOR
Maximum Rated Current:	.31 A
Shielded:	YES
Terminal Placement:	RADIAL
No. of Functions:	1
No. of Terminals:	4
DC Resistance:	3.4 ohm
Package Style (Meter):	Radial
Nominal Inductance (L):	1500 uH
Terminal Shape:	WIRE
Package Height:	8.5 mm
Package Diameter:	10.5 mm
Maximum Operating Temperature:	85 Cel
Package Width:	10.5 mm

Popular Products

Vishay Intertechnology's CRCW080510K0FKEA is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.125 W power dissipation. Ideal for surface mount applications in automotive electronics due to AEC-Q200 reference standard compliance and -55 to 155 °C operating temperature range.

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

2N7002DWH6327XTSA1 by Infineon: N-CHANNEL FET with 60V DS Breakdown Voltage, 0.3A ID, and 3ohm RDS. Ideal for SWITCHING applications in small outline packages with GULL WING terminals.

LM555CN by Texas Instruments is an Analog Waveform Generation IC with a supply voltage range of 4.5V to 16V. It operates b/w 0°C to 70°C, making it suitable for commercial applications. This rectangular package IC has dual terminals and uses bipolar technology for pulse generation in various electronic circuits.

SN65HVD234DR by Texas Instruments is an 8-terminal interface circuit with a data rate of 1 Mbps. Operating temperature ranges from -40 to 125 °C, making it ideal for automotive applications. With a supply voltage of 3.3 V and low current draw of 6 mA, it's suitable for network interfaces in compact designs.

2N7002,215 by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS breakdown voltage of 60V and max drain current of 0.3A. It is used for switching applications in enhancement mode, operates b/w -65 to 150 °C, and has a max power dissipation of 0.2W.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): .8 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;

BSS138LT3G by Onsemi is a N-CHANNEL FET with a min DS breakdown voltage of 50V. It is used for switching applications and has a max drain current of 0.2A and max drain-source on resistance of 3.5 ohm.