Mini-circuits - GALI-6F

HMC659LC5 by Analog Devices is a wide band medium power RF amplifier with 14 dB gain and 50 ohm impedance. It operates from 0 to 15000 MHz, handles up to 20 dBm CW input power, and has a temperature range of -40 to 85°C. Ideal for RF & microwave applications requiring high performance in a compact plastic/epoxy package.

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT; Additional Features: HIGH RELIABILITY; Maximum Input Power (CW): 18 dBm;

ERA-5SM by Mini-circuits is a wide band low power RF amplifier with 16 dB gain, operating from 0 to 4000 MHz. It has a max input power of 13 dBm and VSWR of 1.3, suitable for RF & microwave applications requiring compact surface mount amplification.

WIDE BAND HIGH POWER;

WIDE BAND HIGH POWER;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 20 dBm;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;

SGA-2463Z by Sirenza Microdevices is a wide band low power RF amplifier with a gain of 17.1 dB. It operates at frequencies ranging from 0 MHz to 5000 MHz and can handle a max input power of 18 dBm. This component, made of plastic/epoxy, is suitable for surface mount applications in the RF and microwave field.

WIDE BAND LOW POWER; JESD-609 Code: e3; Terminal Finish: Tin (Sn);

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: PHEMT; No. of Functions: 1;

WIDE BAND MEDIUM POWER; Minimum Operating Frequency: 100 MHz; Maximum Operating Frequency: 4000 MHz; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 27 dBm; Gain: 6.4 dB;

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Voltage Standing Wave Ratio: 2.1; Gain: 9.2 dB; Maximum Operating Frequency: 6000 MHz;

Qorvo's QPA2612 is a GAN technology RF amplifier with 34.2 dB gain, operating from 8-12 GHz. It offers 21 dBm CW input power, VSWR of 4, and is ideal for wideband high-power applications in surface-mount configurations.

WIDE BAND LOW POWER; Gain: 10 dB; Maximum Operating Frequency: 18000 MHz; Terminal Finish: GOLD OVER NICKEL; Minimum Operating Temperature: -40 Cel; Construction: COMPONENT;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Input Power (CW): 5 dBm;

WIDE BAND MEDIUM POWER; JESD-609 Code: e0; Minimum Operating Frequency: 50 MHz; Maximum Voltage Standing Wave Ratio: 1.22; Construction: COMPONENT; Maximum Operating Frequency: 1000 MHz;

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAN; Power Supplies (V): 28;

HMC797APM5E by Analog Devices is a wide band medium power RF amplifier with 13 dB gain and 27 dBm max input power. With a VSWR of 7, it operates from 0 to 22000 MHz, making it ideal for high-frequency applications in RF and microwave systems. The component has a temperature range of -40 to 85°C and features nickel palladium gold terminal finish.

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Construction: MODULE; Maximum Operating Frequency: 160 MHz; Maximum Input Power (CW): 26 dBm;