Mini-circuits - ERA-3SM

WIDE BAND MEDIUM POWER; Gain: 19.4 dB; Minimum Operating Frequency: 50 MHz; JESD-609 Code: e4; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 30 dBm;

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: CERAMIC; Technology: PHEMT; Gain: 23 dB;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Additional Features: LOW NOISE; JESD-609 Code: e3;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Maximum Operating Frequency: 2700 MHz; Maximum Supply Current: 52 mA;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Construction: COMPONENT;

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 15 dBm; Maximum Operating Frequency: 18000 MHz; Minimum Operating Temperature: -40 Cel;

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Maximum Operating Temperature: 110 Cel; Minimum Operating Frequency: 1240 MHz; Maximum Voltage Standing Wave Ratio: 3;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 130 mA;

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Gain: 21.5 dB;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Gain: 18.4 dB;

HMC8413LP2FE by Analog Devices is a PHEMT RF amplifier with 17 dB gain, operating from 10 MHz to 9000 MHz. It has a max input power of 25 dBm and VSWR of 1.29, suitable for wideband medium power applications. With a compact surface mount construction and operating temperatures from -40°C to 85°C, it is ideal for RF and microwave systems requiring high performance in a small form factor.

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Minimum Operating Frequency: 400 MHz; Maximum Operating Frequency: 470 MHz; Minimum Operating Temperature: -30 Cel;

WIDE BAND MEDIUM POWER; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Maximum Operating Temperature: 85 Cel; Maximum Operating Frequency: 2700 MHz; JESD-609 Code: e3;

SPF5043ZSQ by Qorvo is a GAAS RF amplifier with 11.4 dB gain, operating from 50 MHz to 4000 MHz. It has a max input power of 25 dBm and operates at temperatures ranging from -40°C to 85°C. Ideal for wideband low-power applications requiring surface mount technology.

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Power Supplies (V): 5.5;

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Technology: GAN; Maximum Supply Current: 400 mA; Maximum Voltage Standing Wave Ratio: 10;

Analog Devices' HMC287MS8ETR is a GaAs RF amplifier with 3V supply, 15mA max current, and -40 to 85°C operating range. Ideal for narrowband low-power applications, it features a surface-mount package suitable for RF and microwave circuits.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Additional Features: HIGH RELIABILITY;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;