Micron Technology - MT47H128M8SH-25EAAT:M

W9825G6KH-6I by Winbond Electronics is a 16MX16 Synchronous DRAM with 268Mbit memory density. Operating at 3.3V, it features self-refresh and offers a max access time of 5ns. Ideal for industrial applications requiring fast and reliable memory performance in a compact form factor.

AS4C16M16SA-6TCN by Alliance Memory is a 16MX16 Synchronous DRAM with 166 MHz clock frequency. Operating at 3.3V, it offers 16777216 words memory density and supports four bank page burst access mode. Ideal for applications requiring high-speed data processing in commercial temperature environments.

DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 84; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Ports: 1;

Micron Technology's MT48LC8M16A2P-6A:LTR is a 8MX16 Synchronous DRAM with 134217728 bit memory density. Operating at 3.3V, it offers 5.4ns max access time and features self-refresh capability. Ideal for commercial applications requiring fast and reliable memory performance in a compact small outline package.

SYNCHRONOUS DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 168; Package Code: DIMM; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MT40A4G8NEA-062E:F by Micron Technology is a DDR4 DRAM with 4GX8 organization, operating at up to 1600 MHz. It features a thin profile grid array package, common I/O type, and self-refresh capability. Ideal for applications requiring high-speed synchronous memory with a density of 34 Gb and low power consumption.

LPDDR4 DRAM;

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

LPDDR4 DRAM;

DDR3 DRAM; No. of Terminals: 96; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Sequential Burst Length: 4,8;

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Input/Output Type: COMMON;

IS42S16320D-7TL by Integrated Silicon Solution is a 32MX16 Synchronous DRAM with 3.3V supply, operating at up to 143MHz clock frequency. It features self-refresh and common I/O type, suitable for applications requiring fast memory access in commercial temperature environments.

Micron Technology's MT40A512M16LY-062EIT:E is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data access with multi-bank page burst access mode.

NT5CC64M16GP-DI by Nanya Technology is a DDR3L DRAM with 64MX16 organization, operating at 800 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in compact devices like smartphones and tablets.

Micron Technology's MT48LC2M32B2P-6AIT:JTR is a 3.3V, 2MX32 Synchronous DRAM with 5.4ns access time. Ideal for industrial applications, it features self-refresh mode and operates at temperatures ranging from -40 to 85°C. The memory density is 67108864 bits with a memory width of 32 bits.