Micron Technology - MT47H128M16RT-3:C

PAGE MODE DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 16; Package Code: DIP; Refresh Cycles: 128; Package Shape: RECTANGULAR;

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DDR4 DRAM; JESD-609 Code: e1; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN SILVER COPPER; Peak Reflow Temperature (C): 260;

Infineon's S70KS1282GABHB033 is a 16MX8 DRAM with 1.8V supply, operating at up to 200MHz clock frequency. Suitable for automotive applications (AEC-Q100), it features synchronous operation, self-refresh capability, and a compact grid array package style.

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3; Length: 8 mm;

DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 84; Package Code: TFBGA; Package Shape: RECTANGULAR; Memory Width: 16;

NT5CC64M16GP-DII by Nanya Technology is a DDR3L DRAM with 64MX16 organization, operating at 800 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.

SYNCHRONOUS DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: DIMM; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

IS42S16400J-6BLI by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with a max clock frequency of 166 MHz. It operates in an industrial temperature grade range and has a memory density of 67108864 bits. This memory IC type is commonly used in applications requiring high-speed data storage and retrieval.

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Package Shape: RECTANGULAR; Length: 13 mm;

Micron Technology's MT53E128M32D2DS-046WT:A is a LPDDR4 DRAM with 128MX32 organization, operating at 2133 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in compact devices like smartphones and tablets.

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 3.6 V;

DDR3 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH;

DDR4 DRAM; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; No. of Words Code: 256M;

DDR4 DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Maximum Operating Temperature: 125 Cel;

EDO DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 72; Package Code: SIMM; Refresh Cycles: 2048; Package Shape: RECTANGULAR;

FAST PAGE DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: ZIP; Refresh Cycles: 1024; Package Shape: RECTANGULAR;

FAST PAGE DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: DIP; Refresh Cycles: 512; Package Shape: RECTANGULAR;

MT47H128M16RT-25E:C by Micron Technology is a 128MX16 DDR2 DRAM with 400 MHz clock frequency, 1.8V supply voltage, and 85°C operating temperature. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

Micron Technology's MT48LC16M16A2P-6AIT:G is a 16MX16 Synchronous DRAM with 167 MHz clock frequency, 3.3V supply voltage, and -40 to 85°C operating temperature range. Ideal for industrial applications requiring high-speed memory access with a compact form factor and low power consumption.