Micron Technology - EDB4432BBBJ-1DAUT-F-D

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE; Surface Mount: YES;

MT41J128M16JT-125 by Micron Technology is a DDR3 DRAM with 128MX16 organization, operating at a max clock frequency of 800 MHz. It has a memory density of 2GB and is commonly used in automotive applications due to its AEC-Q100 screening level.

Micron Technology's MT41K256M8DA-125IT:K is a DDR3L DRAM with 256MX8 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high-speed and efficient memory performance in a compact grid array package.

FAST PAGE DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 18; Package Code: DIP; Refresh Cycles: 1024; Package Shape: RECTANGULAR;

DRAMs;

Infineon's S27KL0642DPBHB020 is a 8MX8 DRAM with 67108864 bit memory density. It operates synchronously at up to 200 MHz, featuring self-refresh and 3-STATE output characteristics. Ideal for automotive applications due to AEC-Q100 screening level and low profile grid array package style.

Alliance Memory's AS4C512M16D3L-12BCN is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in compact electronic devices.

FAST PAGE DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 30; Package Code: SIMM; Refresh Cycles: 512; Package Shape: RECTANGULAR;

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 288; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

Micron Technology's MT48LC4M32B2P-6A:LTR is a 3.3V Synchronous DRAM with 4MX32 organization, operating at 0-70°C. Featuring self-refresh and four-bank page burst access mode, it offers a memory density of 134217728 bits for commercial applications requiring fast access times of up to 5.4 ns.

MT40A256M16LY-062E:FTR by Micron Technology is a DDR4 DRAM with 256MX16 organization, operating at a max clock frequency of 1600 MHz. It has a thin profile package style and is suitable for applications requiring high-speed synchronous memory.

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Functions: 1;

DDR3 DRAM; No. of Terminals: 78; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu);

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: FBGA; Refresh Cycles: 4096; Package Shape: SQUARE;

Micron Technology's MT53E512M32D1ZW-046AIT:B is a LPDDR4 DRAM with 512MX32 organization, operating at 2133 MHz. It features self-refresh mode, common I/O type, and AEC-Q100 screening level. Ideal for applications requiring high-speed synchronous memory with low power consumption in automotive electronics and industrial devices.

MT46H32M16LFBF-6AIT:C by Micron Technology is a 32MX16 DDR1 DRAM with a memory density of 536870912 bit. It operates at a max clock frequency of 166 MHz and has an operating temperature range of -40 to 85 °C. It is commonly used in industrial applications requiring high-speed synchronous memory.

DDR3 DRAM; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B96; Operating Mode: SYNCHRONOUS;

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3; Length: 8 mm;

MT40A512M16LY-062EAUT:ETR by Micron Technology is a DDR4 DRAM with 512MX16 organization, operating at a max clock frequency of 1600 MHz. It is commonly used in applications requiring high-speed and synchronous memory access, such as servers, workstations, and high-performance computing systems.

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 86; Package Code: TSOP2; Package Shape: RECTANGULAR; Memory Width: 32;