Micro Electronics - TIP32C

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 5 A; JEDEC-95 Code: TO-220AB; Peak Reflow Temperature (C): NOT SPECIFIED;

NJVMJD44H11G by Onsemi is a NPN BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it has a hFE of min. 40 and operates up to 150°C. Suitable for surface mount designs in automotive electronics (AEC-Q101 compliant).

Toshiba's ULN2803AP is an 8-bank NPN Darlington transistor array with built-in diode and resistor, ideal for switching applications. Features include VCEsat of 1.6V, hFE min of 1000, and IC max of 0.5A. With a max operating temp of 85°C and VCE max of 50V, it offers reliable performance in various electronic circuits.

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 6 A; No. of Terminals: 3;

BCP56T1G by Onsemi is a NPN Power BJT with 80V VCEO, 1A IC, and 1.5W Ptot. Ideal for amplifier applications, it has hFE of min. 40 and fT of 130MHz. Its small outline package with gull wing terminals makes it suitable for surface mount designs.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 12.5 W; Maximum Collector Current (IC): 1.5 A; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 175 MHz; Maximum Collector Current (IC): 2 A; Terminal Finish: Matte Tin (Sn);

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; Package Style (Meter): FLANGE MOUNT;

Power Bipolar Transistors; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; No. of Elements: 1;

TIP31C by Texas Instruments is a NPN BJT transistor with 3A IC, 30W Pd, and 100V VCE. Ideal for switching applications due to its single configuration and high hFE of 10. Operates up to 150°C, featuring a rectangular package with through-hole terminals.

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 6 A; Transistor Element Material: SILICON; JESD-30 Code: R-PSFM-T3;

Power Bipolar Transistors; Surface Mount: NO; No. of Terminals: 3; JEDEC-95 Code: TO-220AB; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Operating Temperature: 150 Cel;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Collector Current (IC): 15 A; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;

BCP53-16T3G by Onsemi is a PNP power BJT with 80V VCEO, 1.5A IC, and 100 hFE. Ideal for amplifier applications, it operates b/w -65 to 150°C with a fT of 50MHz. This small outline transistor has Gull Wing terminals in a rectangular package.

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A;

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A;