Maxim Integrated - MAX2659ELT/V+T

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 10 dB;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Maximum Operating Frequency: 1000 MHz; Maximum Supply Current: 525 mA;

WIDE BAND LOW POWER;

The NXP Semiconductors BGU8103X is a RF & Microwave Amplifier with 10 dBm CW input power, 1.78 max VSWR, and 14.5 dB gain. It operates b/w -40 to 85°C, has a characteristic impedance of 50 ohm, and is suitable for narrow band low power applications in the frequency range of 1559-1610 MHz.

WIDE BAND HIGH POWER; Maximum Operating Frequency: 18000 MHz; JESD-609 Code: e3/e4; Terminal Finish: MATTE TIN/GOLD; Minimum Operating Frequency: 0 MHz; Maximum Input Power (CW): 43 dBm;

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 9.2 dB; Maximum Input Power (CW): 20 dBm; Package Equivalence Code: SOT-343R;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;

WIDE BAND LOW POWER; Gain: 15.5 dB; Maximum Voltage Standing Wave Ratio: 1.2; Maximum Operating Frequency: 3600 MHz; Maximum Input Power (CW): 5 dBm; Characteristic Impedance: 50 ohm;

WIDE BAND LOW POWER; Technology: BIPOLAR; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3; Additional Features: LOW NOISE; Characteristic Impedance: 50 ohm;

Qorvo's RDA1005LTR13 is a wide band low power RF amplifier with 15.5 dB gain, operating from 50 MHz to 4000 MHz. It has a max input power of 20 dBm and operates on a 5V power supply. Ideal for surface mount applications in RF & microwave systems.

WIDE BAND LOW POWER; Terminal Finish: TIN; JESD-609 Code: e3; Construction: COMPONENT; Gain: 18 dB; Characteristic Impedance: 50 ohm;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Terminal Finish: Tin (Sn);

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT; Additional Features: HIGH RELIABILITY; Maximum Input Power (CW): 18 dBm;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: TO-243;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;

WIDE BAND LOW POWER; Terminal Finish: TIN; Maximum Operating Frequency: 4000 MHz; Additional Features: HIGH RELIABILITY; Minimum Operating Frequency: 50 MHz; Maximum Input Power (CW): 23 dBm;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; No. of Functions: 1;

HMC498LC4TR by Analog Devices is a wide band medium power RF amplifier with 18 dB gain, operating from 17-24 GHz. It has a max input power of 10 dBm and operates on a 5V power supply. Ideal for RF and microwave applications requiring high performance amplification in a compact ceramic package.

HMC478MP86TR by Analog Devices is a wide band low power RF amplifier with a max operating temperature of 85°C and a min operating temperature of -40°C. It has 1 function, operates on a 5V power supply, and is mounted using surface mount technology. This amplifier is commonly used in RF and microwave applications.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Maximum Operating Frequency: 5900 MHz; Characteristic Impedance: 50 ohm;