M/a-com Technology Solutions - SMA70-2

TCBT-14+ by Mini-circuits is a wide band low power RF amplifier with max input power of 30 dBm and VSWR of 1.5. Operating from 10 MHz to 10 GHz, it's ideal for RF & microwave applications requiring high performance in a compact form factor. With gold over nickel finish, it ensures reliable operation in temperatures ranging from -40°C to 85°C.

Analog Devices' MAX2643EXT+T is a wide band low power RF amplifier with 14.5 dB gain, operating from 800-1000 MHz. It can handle up to 5 dBm input power, with an operating temperature range of -40 to 85°C. Ideal for applications requiring high frequency amplification in RF and microwave systems.

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Minimum Operating Frequency: 1805 MHz; Package Equivalence Code: FLNG,.67"H.SPACE; Terminal Finish: Matte Tin (Sn);

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; Minimum Operating Temperature: -40 Cel;

WIDE BAND MEDIUM POWER; Gain: 8 dB; Construction: COMPONENT; Minimum Operating Frequency: 0 MHz; Maximum Operating Frequency: 50000 MHz; Maximum Input Power (CW): 18 dBm;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: CERAMIC; Technology: GAAS; Terminal Finish: GOLD OVER NICKEL;

HMC634LC4 by Analog Devices is a wide band low power RF amplifier with 17 dB gain, operating frequency range of 5-20 GHz. It features a max input power of 10 dBm, ceramic package body material, and gold over nickel terminal finish. Ideal for applications requiring high-frequency amplification in RF and microwave systems.

XL1000-BD-000V by M/a-com Technology Solutions is a GAAS RF amplifier with 12dB gain, operating b/w 20-40 GHz. It has a max input power of 12 dBm and requires a 5V power supply. Ideal for wideband low-power applications in RF & microwave systems due to its compact construction and temperature range of -55 to 85°C.

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Gain: 17.5 dB; Maximum Input Power (CW): 10 dBm; Minimum Operating Temperature: -65 Cel; Construction: COMPONENT;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 85 mA;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Gain: 10 dB; Maximum Voltage Standing Wave Ratio: 2;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Terminal Finish: Nickel/Gold (Ni/Au); Maximum Supply Current: 70 mA;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Technology: GAAS; No. of Functions: 1; Additional Features: HIGH RELIABILITY;

WIDE BAND LOW POWER;

WIDE BAND MEDIUM POWER; JESD-609 Code: e4; Terminal Finish: NICKEL PALLADIUM GOLD;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: TO-243;

Analog Devices' HMC5805ALS6TR is a wide band low power RF amplifier with 9 dB gain and 22 dBm max input power. Operating from -40 to 85°C, it covers frequencies up to 40 GHz. Ideal for RF and microwave applications requiring high performance in a compact form factor.

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Additional Features: LOW NOISE;

WIDE BAND MEDIUM POWER; Minimum Operating Frequency: 0 MHz; Characteristic Impedance: 50 ohm; Additional Features: HIGH RELIABILITY; Terminal Finish: NICKEL PALLADIUM GOLD; Maximum Input Power (CW): 15 dBm;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Terminal Finish: NICKEL PALLADIUM GOLD; Minimum Operating Temperature: -40 Cel;