Intersil - HGTP10N120BN

HGTP10N120BN by Intersil

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Manufacturer Intersil
Manufacturer's Part Number HGTP10N120BN
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 198 W; Maximum Collector Current (IC): 35 A; Terminal Finish: Tin/Lead (Sn/Pb);
Datasheet HGTP10N120BN Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 35 A
Configuration: SINGLE
Transistor Element Material: SILICON
Maximum Rise Time (tr): 15 ns
Transistor Application: MOTOR CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.8 V
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Finish: Tin/Lead (Sn/Pb)
Nominal Turn Off Time (toff): 330 ns
No. of Terminals: 3
Maximum Power Dissipation (Abs): 198 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 32 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Maximum Fall Time (tf): 140 ns
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 1200 V
Additional Features: LOW CONDUCTION LOSS
Maximum Gate-Emitter Voltage: 20 V
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