Intersil - D44H11

  1. Home
  2. Intersil - D44H11
D44H11 by Intersil

Image shown is a representation only.

Manufacturer Intersil
Manufacturer's Part Number D44H11
Description NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;
Datasheet D44H11 Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 50 MHz
Maximum Collector Current (IC): 10 A
Maximum Power Dissipation (Abs): 50 W
Configuration: SINGLE
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 60
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

TIP112 by General Electric Solid State

TIP112

General Electric Solid State

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 500;
2SC5200O by Inchange Semiconductor

2SC5200O

Inchange Semiconductor

Other Transistors;
D44H8 by Mospec Semiconductor

D44H8

Mospec Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 15 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;
MMBT3904LT1 by Forward International Electronics

MMBT3904LT1

Forward International Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .2 A;
TIP112 by Semitronics

TIP112

Semitronics

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 500;
ZTX753 by Plessey Semiconductors Discrete Components Div

ZTX753

Plessey Semiconductors Discrete Components Div

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;
IRF7420TRPBF by International Rectifier

IRF7420TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30;
MMBT4401 by Motorola

MMBT4401

Motorola

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;
TIP29C by North American Philips Discrete Products Div

TIP29C

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;
ZXMP6A16KTC by Zetex Plc

ZXMP6A16KTC

Zetex Plc

Other Transistors; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 40;
2N2907A by North American Philips Discrete Products Div

2N2907A

North American Philips Discrete Products Div

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
BC337-40 by Sprague Electric

BC337-40

Sprague Electric

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; Terminal Finish: Tin/Lead (Sn/Pb);
2N2222A by Gec Plessey Semiconductors

2N2222A

Gec Plessey Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MMBT3906 by Sinyork

MMBT3906

Sinyork

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;
2N2222AUA by New England Semiconductor

2N2222AUA

New England Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
TIP125 by Semiconductors

TIP125

Semiconductors

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Terminal Finish: Tin/Lead (Sn/Pb);
BD243C by Boca Semiconductor

BD243C

Boca Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 8 A; Minimum DC Current Gain (hFE): 30;
BC817-40 by Vishay Intertechnology

BC817-40

Vishay Intertechnology

Vishay Intertechnology's BC817-40 NPN transistor offers a max power dissipation of 0.33W, min DC current gain of 250, and max collector current of 0.5A. Ideal for surface mount applications in electronics, with an operating temp up to 150°C.
TIP122 by Mospec Semiconductor

TIP122

Mospec Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;
BDW93C by Texas Instruments

BDW93C

Texas Instruments

Texas Instruments' BDW93C NPN Darlington transistor offers 80W power dissipation, 750 min hFE, and 12A max collector current. Ideal for high-power applications in environments up to 150°C.