Infineon Technologies - SFH314FA

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Maximum Response Time: .000007 s; Maximum On State Current: .015 A;

PHOTO TRANSISTOR; Shape: ROUND; Infrared (IR) Range: YES; Peak Wavelength (nm): 850; Nominal Light Current: 10 mA; Additional Features: HIGH SENSITIVITY;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: MATTE TIN; Size: 5 mm; Configuration: SINGLE; Maximum Power Dissipation: .1 W;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .1 W; Maximum Operating Temperature: 100 Cel; Configuration: SINGLE;

Osram Opto SFH3710-3/4 is a single phototransistor with peak wavelength of 570nm. It operates b/w -40 to 85°C, with max on-state current of 0.02A. Ideal for surface mount applications requiring light sensing in the range of 0.004mA to 50nA dark current.

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; JESD-609 Code: e0; Maximum Dark Current: 200 nA;

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 570; Maximum Operating Temperature: 100 Cel; Maximum On State Current: .02 A;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .00001 s; Maximum Dark Current: 100 nA; Minimum Operating Temperature: -55 Cel; Maximum On State Current: .05 A;

SFH309FA by Infineon Technologies is a phototransistor with peak wavelength of 900nm, max operating temp of 100°C, and min operating temp of -55°C. Ideal for applications requiring through hole mounting, it has a max on state current of 0.015A and max dark current of 200nA.

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Configuration: SINGLE; Infrared (IR) Range: YES; Minimum Operating Temperature: -30 Cel; Size: 3.1 mm;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; No. of Functions: 1; Additional Features: HIGH SENSITIVITY; Nominal Light Current: .4 mA; Minimum Collector-emitter Breakdown Voltage: 40 V;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Size: 1.58 mm; No. of Functions: 1; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum Power Dissipation: .1 W;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 100 nA; Peak Wavelength (nm): 880; Shape: ROUND; Maximum Operating Temperature: 100 Cel;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Additional Features: TTL COMPATIBLE; No. of Functions: 1; Infrared (IR) Range: YES; Maximum Operating Temperature: 125 Cel;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 25 nA; No. of Functions: 1; Additional Features: TTL COMPATIBLE; Infrared (IR) Range: YES;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 85 Cel; Maximum Response Time: .000008 s; Maximum Dark Current: 200 nA;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -55 Cel; Maximum Dark Current: 100 nA; Maximum Response Time: .000015 s; Maximum Operating Temperature: 125 Cel;

PHOTO TRANSISTOR; Infrared (IR) Range: YES; Peak Wavelength (nm): 900; Maximum Operating Temperature: 100 Cel; Maximum Dark Current: 200 nA; Size: 3 mm;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; No. of Functions: 1; Peak Wavelength (nm): 930; Maximum On State Current: .05 A; Maximum Operating Temperature: 125 Cel;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Nominal Light Current: 7 mA; Maximum On State Current: .05 A; Maximum Power Dissipation: .1 W;