Infineon Technologies - SFH300FA

The Onsemi QSD124 is a 5mm single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100°C, with max power dissipation of 0.1W. Ideal for applications requiring fast response time and IR range detection in through hole mounting setups.

SFH309FA-4 by Infineon Technologies is a phototransistor with a peak wavelength of 900nm. It can operate in temperatures ranging from -55°C to 100°C and has a max power dissipation of 0.165W. This through-hole mount device is commonly used in applications requiring fast response times and low dark current.

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .0000015 s; Minimum Operating Temperature: -60 Cel; Maximum Power Dissipation: .05 W; Infrared (IR) Range: YES;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000012 s; Maximum Operating Temperature: 100 Cel; JESD-609 Code: e0;

The Osram Opto Semiconductors SFH313FA-3/4 is a 5mm phototransistor with peak wavelength of 870nm. It operates b/w -40 to 100°C, with max power dissipation of 0.2W and response time of 0.000014s. Ideal for applications requiring fast light detection in IR range, such as optical sensors and proximity detectors.

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Nominal Light Current: 7 mA; Maximum On State Current: .05 A; Maximum Power Dissipation: .1 W;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000006 s; Maximum Dark Current: 200 nA; Maximum Power Dissipation: .165 W;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; Maximum Dark Current: 100 nA; Maximum Operating Temperature: 100 Cel;

PHOTO DARLINGTON; Minimum Collector-emitter Breakdown Voltage: 30 V; Size: 1.5 mm; Minimum Operating Temperature: -25 Cel; Maximum Operating Temperature: 85 Cel; Infrared (IR) Range: YES;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 830; Maximum Dark Current: 50 nA; Nominal Light Current: 9.6 mA; Maximum Response Time: .000009 s;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; Maximum Dark Current: 100 nA; Peak Wavelength (nm): 920;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Shape: ROUND; Maximum Operating Temperature: 125 Cel; Minimum Operating Temperature: -65 Cel; Size: 1.52 mm;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Minimum Operating Temperature: -55 Cel; Maximum Dark Current: 100 nA; Maximum Power Dissipation: .125 W;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Minimum Operating Temperature: -65 Cel; Peak Wavelength (nm): 930; Maximum Power Dissipation: .05 W; Nominal Light Current: 7 mA;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Maximum Dark Current: 50 nA; Maximum Operating Temperature: 100 Cel; Nominal Light Current: .0017 mA; Shape: SQUARE;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Nominal Light Current: .65 mA; Maximum Dark Current: 200 nA; Maximum Operating Temperature: 100 Cel; Maximum On State Current: .015 A;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Maximum Response Time: .000008 s; Minimum Operating Temperature: -40 Cel;

PHOTO TRANSISTOR; No. of Functions: 1; Maximum Dark Current: 50 nA; Peak Wavelength (nm): 570; Minimum Operating Temperature: -40 Cel; Shape: SQUARE;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000006 s; Peak Wavelength (nm): 850; Maximum Dark Current: 20 nA; Maximum Power Dissipation: .075 W;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -40 Cel; Maximum Response Time: .000008 s; Maximum Dark Current: 200 nA;