IGW50N60TP by Infineon Technologies | Vyrian | Semiconductor & Electronic Component Distributor

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IGW50N60TP
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 319.2 W; Maximum Collector Current (IC): 80 A; Minimum Operating Temperature: -40 Cel;
Datasheet	IGW50N60TP Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	80 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	5.7 V
Surface Mount:	NO
Terminal Finish:	TIN
Nominal Turn Off Time (toff):	332 ns
No. of Terminals:	3
Maximum Power Dissipation (Abs):	319.2 W
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	55 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	175 Cel
JEDEC-95 Code:	TO-247
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-40 Cel
Maximum Collector-Emitter Voltage:	600 V
Maximum Gate-Emitter Voltage:	20 V
Maximum VCEsat:	1.8 V

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