Infineon Technologies - BPX38-2

PHOTO TRANSISTOR; Terminal Finish: PURE TIN OVER NICKEL; Maximum Dark Current: 50 nA; Infrared (IR) Range: YES; Size: 2.4 mm; Minimum Collector-emitter Breakdown Voltage: 35 V;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 800; Minimum Operating Temperature: -20 Cel; Maximum Dark Current: 100 nA; Maximum Operating Temperature: 100 Cel;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Infrared (IR) Range: YES; Size: 4.65 mm; Maximum On State Current: .05 A; Minimum Collector-emitter Breakdown Voltage: 30 V;

PHOTO TRANSISTOR; Minimum Operating Temperature: -25 Cel; Additional Features: SIDE VIEW; Size: 1.5 mm; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum Operating Temperature: 85 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000006 s; Peak Wavelength (nm): 860; Maximum Power Dissipation: .165 W; Minimum Operating Temperature: -55 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 125 Cel; Peak Wavelength (nm): 800; Maximum On State Current: .05 A;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Minimum Collector-emitter Breakdown Voltage: 70 V; Nominal Light Current: 7.5 mA; JESD-609 Code: e3;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Minimum Collector-emitter Breakdown Voltage: 30 V; Configuration: SINGLE; Maximum Dark Current: 200 nA; Maximum Operating Temperature: 100 Cel;

PHOTO TRANSISTOR; Mounting Feature: RADIAL MOUNT; Terminal Finish: TIN; JESD-609 Code: e3; Nominal Light Current: .63 mA; Minimum Operating Temperature: -40 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000008 s; Maximum On State Current: .05 A; Minimum Operating Temperature: -60 Cel; Maximum Operating Temperature: 125 Cel;

QSD124.A4R0 by Qt Optoelectronics is a 5mm round phototransistor with max operating temp of 100°C and min of -40°C. It has nominal light current of 6mA, dark current of 100nA, and IR range. Ideal for applications requiring photo detection in various environments.

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Peak Wavelength (nm): 870; Maximum Operating Temperature: 100 Cel;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: MATTE TIN; No. of Functions: 1; Maximum Power Dissipation: .075 W; Nominal Light Current: 1.5 mA;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Power Dissipation: .15 W; Maximum Operating Temperature: 125 Cel; Minimum Operating Temperature: -55 Cel; Maximum Dark Current: 100 nA;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 125 Cel; Maximum Response Time: .000015 s; Maximum Power Dissipation: .075 W;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Configuration: SINGLE; Infrared (IR) Range: YES; Minimum Operating Temperature: -30 Cel; Size: 3.1 mm;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; Minimum Operating Temperature: -55 Cel; Maximum Response Time: .0000075 s;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Maximum On State Current: .05 A; Minimum Operating Temperature: -40 Cel; Maximum Dark Current: 20 nA;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); No. of Functions: 1; JESD-609 Code: e3; Size: 5 mm;

PHOTO TRANSISTOR; No. of Functions: 1; Maximum Dark Current: 50 nA; Peak Wavelength (nm): 570; Minimum Operating Temperature: -40 Cel; Shape: SQUARE;