Infineon Technologies - BFP740E6327HTSA1

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BFP740E6327HTSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BFP740E6327HTSA1
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 44000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .045 A;
Datasheet BFP740E6327HTSA1 Datasheet
NAME DESCRIPTION
Minimum Power Gain (Gp): 19.5 dB
Nominal Transition Frequency (fT): 44000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .045 A
Configuration: SINGLE
Transistor Element Material: SILICON GERMANIUM CARBON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 160
Minimum Operating Temperature: -55 Cel
No. of Terminals: 4
Maximum Power Dissipation (Abs): .16 W
Maximum Collector-Emitter Voltage: 4 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Highest Frequency Band: C BAND
Maximum Operating Temperature: 150 Cel
Maximum Collector-Base Capacitance: .08 pF
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