Infineon Technologies - BCP5616H6327XTSA1

  1. Home
  2. Infineon Technologies - BCP5616H6327XTSA1
BCP5616H6327XTSA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BCP5616H6327XTSA1
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;
Datasheet BCP5616H6327XTSA1 Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 100 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 1 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 4
Maximum Power Dissipation (Abs): 2 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 100
JESD-609 Code: e3
Maximum Collector-Emitter Voltage: 80 V
Additional Features: TR, 7 INCH; 1000
Reference Standard: AEC-Q101
Maximum VCEsat: .5 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

TIP32C by Crimson Semiconductor

TIP32C

Crimson Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
TIP3055 by STMicroelectronics

TIP3055

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 15 A;
BD139 by Central Semiconductor

BD139

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 190 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
BD139G by Onsemi

BD139G

Onsemi

The Onsemi BD139G is a NPN BJT transistor with max. power dissipation of 12.5W, hFE of 25, and max. collector current of 1.5A. Ideal for amplifier applications due to its single configuration and max. collector-emitter voltage of 80V, operating up to 150°C in a rectangular package style with through-hole terminals.
TIP147T by Fairchild Semiconductor

TIP147T

Fairchild Semiconductor

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 10 A; JEDEC-95 Code: TO-220;
TIP112G by Onsemi

TIP112G

Onsemi

TIP112G by Onsemi is a power BJT transistor with NPN polarity. It has a max power dissipation of 50W and can handle a max collector-emitter voltage of 100V. This transistor is commonly used in amplifier applications due to its high DC current gain (hFE) of 500 and nominal transition frequency (fT) of 25MHz.
TIP41C by Kec

TIP41C

Kec

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
JAN2N3055 by Solitron Devices

JAN2N3055

Solitron Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
2N3055 by Micro Commercial Components

2N3055

Micro Commercial Components

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Collector Current (IC): 10 A; Package Body Material: METAL;
BD140 by Continental Device India

BD140

Continental Device India

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
TIP31CG by Changzhou Galaxy Century Microelectronics

TIP31CG

Changzhou Galaxy Century Microelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
TIP127TU by Fairchild Semiconductor

TIP127TU

Fairchild Semiconductor

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; JESD-30 Code: R-PSFM-T3;
TIP122 by Onsemi

TIP122

Onsemi

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A;
TIP125 by Motorola

TIP125

Motorola

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A;
2N3055 by Powerex

2N3055

Powerex

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
BD139 by Fairchild Semiconductor

BD139

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
TIP117 by Texas Instruments

TIP117

Texas Instruments

TIP117 by Texas Instruments is a PNP Darlington transistor with max. power dissipation of 50W and max. collector current of 4A. Ideal for switching applications, it has a min DC current gain of 500 (hFE) and operates at up to 150°C.
2N3055 by Aeroflex/metelics

2N3055

Aeroflex/metelics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Minimum DC Current Gain (hFE): 5; Package Body Material: METAL;
MJD31CG by Changzhou Galaxy Century Microelectronics

MJD31CG

Changzhou Galaxy Century Microelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 3 A;
TIP31C by Changzhou Galaxy Century Microelectronics

TIP31C

Changzhou Galaxy Century Microelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 3 A; Package Style (Meter): FLANGE MOUNT;