Infineon Technologies - BC846

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 500;

FDV304P_NB8U003 by Fairchild Semiconductor is a P-CHANNEL transistor with a max drain current of 0.46A and power dissipation of 0.35W. It operates in enhancement mode, suitable for applications requiring high temperature resistance up to 150°C, making it ideal for various electronic circuits.

Other Transistors;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 3 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A; Terminal Finish: Tin/Lead (Sn/Pb);

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

Vishay Intertechnology's BC856B is a PNP transistor with a max power dissipation of 0.31W, min DC current gain of 200, and max operating temp of 150°C. Ideal for applications requiring a single configuration such as surface mount technology with a matte tin finish.

BSS83PE6327 by Infineon is a P-CHANNEL transistor with a max drain current of 0.33A and power dissipation of 0.36W. It operates in enhancement mode, suitable for applications requiring high temperature resistance up to 150°C. This surface-mount transistor utilizes metal-oxide semiconductor technology, making it ideal for various electronic circuits.

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 150 Cel;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; JESD-609 Code: e3;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 210 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 8 A; Maximum Operating Temperature: 150 Cel;

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .05 W; Maximum Collector Current (IC): .004 A; Minimum DC Current Gain (hFE): 1000;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Finish: MATTE TIN; Field Effect Transistor Technology: JUNCTION; Peak Reflow Temperature (C): 260;