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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BA885 |
| Description | PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR; |
| Datasheet | BA885 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Diode Resistive Test Frequency: | 100 MHz |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Config: | SINGLE |
| Diode Type: | PIN DIODE |
| Frequency Band: | MEDIUM FREQUENCY TO L BAND |
| Diode Resistive Test Current: | 1.5 mA |
| Sub-Category: | PIN Diodes |
| Surface Mount: | YES |
| Terminal Finish: | Tin (Sn) |
| No. of Terminals: | 3 |
| Terminal Position: | DUAL |
| Maximum Diode Capacitance: | .4 pF |
| Package Style (Meter): | SMALL OUTLINE |
| Technology: | POSITIVE-INTRINSIC-NEGATIVE |
| JESD-30 Code: | R-PDSO-G3 |
| Minimum Breakdown Voltage: | 50 V |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Diode Forward Resistance: | 7 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Nominal Minority Carrier Lifetime: | 1.6 us |
| JESD-609 Code: | e3 |
| Nominal Diode Capacitance: | .25 pF |
| Diode Element Material: | SILICON |
| Qualification: | Not Qualified |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Application: | ATTENUATOR; SWITCHING |
