Infineon Technologies - BA779E6327

BA779E6327 by Infineon Technologies

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BA779E6327
Description	PIN DIODE; Surface Mount: YES; Reverse Test Voltage: 0 V; Diode Resistive Test Current: 1.5 mA; Nominal Minority Carrier Lifetime: 1.6 us; Maximum Diode Forward Resistance: 40 ohm;
Datasheet	BA779E6327 Datasheet

BA779E6327 Technical Details

NAME	DESCRIPTION
Diode Resistive Test Frequency:	100 MHz
Nominal Minority Carrier Lifetime:	1.6 us
Reverse Test Voltage:	0 V
Diode Type:	PIN DIODE
Minimum Breakdown Voltage:	50 V
No. of Elements:	1
Diode Resistive Test Current:	1.5 mA
Maximum Operating Temperature:	150 Cel
Maximum Diode Forward Resistance:	40 ohm
Sub-Category:	PIN Diodes
Surface Mount:	YES
Nominal Diode Capacitance:	.26 pF

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