Infineon Technologies - 6MS24017P43W41646NOSA1

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Nominal Turn Off Time (toff): 1300 ns; Minimum Operating Temperature: -40 Cel; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 455 W; Maximum Collector Current (IC): 150 A; Maximum Gate-Emitter Threshold Voltage: 7.5 V;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 12 A; Package Style (Meter): SMALL OUTLINE;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 24 A; Reference Standard: UL RECOGNIZED; Terminal Finish: TIN/SILVER;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 35 A; Package Shape: RECTANGULAR; Maximum Collector-Emitter Voltage: 1200 V;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 283 W; Maximum Collector Current (IC): 80 A; JEDEC-95 Code: TO-247;

F1225R12KT4GBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 12 elements, 1200V max collector-emitter voltage, and 55ns nominal turn on time. It is used for power control applications due to its complex configuration and UL recognized reference standard.

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 885 W; Maximum Collector Current (IC): 150 A; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 595 W; Maximum Collector Current (IC): 80 A; Nominal Turn On Time (ton): 115 ns;

N-Channel; Nominal Turn On Time (ton): 14.4 ns; Terminal Finish: TIN; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON; Maximum Gate-Emitter Threshold Voltage: 3.9 V;

IRG4PC30KPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 28A. It is designed for MOTOR CONTROL applications, featuring a nominal turn-off time of 380ns and a max power dissipation of 42W.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 80 A; Terminal Finish: Matte Tin (Sn) - annealed;

The Mitsubishi Electric MG400V1US51A is an N-CHANNEL IGBT transistor with a max VCEsat of 4.5V and IC of 400A. Ideal for power control applications, it has a toff of 770ns and ton of 210ns. With a max operating temperature of 150°C, this UL RECOGNIZED component offers high power dissipation at 2750W in a RECTANGULAR package style.

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 85 A; No. of Elements: 6;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 28 A; Package Style (Meter): FLANGE MOUNT;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 390 W; Maximum Collector Current (IC): 75 A; Nominal Turn Off Time (toff): 161 ns;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 55 A; No. of Terminals: 3; JESD-30 Code: R-PSFM-T3;

Infineon Technologies' FS400R07A3E3H6BPSA1 is an N-Channel IGBT with a max VCEsat of 6.5V, nominal toff of 430ns, and max power dissipation of 811W. It is commonly used in applications requiring high collector-emitter voltage (705V) and current (5001A), such as power electronics and motor drives.

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 265 A; Package Body Material: UNSPECIFIED; Maximum Collector-Emitter Voltage: 600 V;