Hittite Microwave - HMC506LP4ETR

WIDE BAND HIGH POWER;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 13 dBm;

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 4000 MHz;

Analog Devices' HMC441LP3ETR is a GAAS RF amplifier with 10dB gain, operating from 6.5 to 13.5GHz, handling up to 15dBm CW input power. With a compact surface-mount package and low power consumption of 115mA at 5V, it's ideal for wideband applications in RF and microwave systems.

NARROW BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Power Supplies (V): 3/5; Construction: COMPONENT;

RF/Microwave Amplifiers;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Construction: COMPONENT; Maximum Operating Temperature: 85 Cel;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: LCC12,.12SQ,20;

WIDE BAND MEDIUM POWER; JESD-609 Code: e3; Gain: 23 dB; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT; Maximum Input Power (CW): 20 dBm;

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Technology: GAN; No. of Functions: 1; Construction: COMPONENT;

RF/Microwave Amplifiers; No. of Terminals: 4; Package Body Material: METAL; Package Equivalence Code: MODULE,4LEAD,.45; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: 0 Cel;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 15 dBm;

NARROW BAND LOW POWER;

Analog Devices' HMC903LP3E is a GAAS RF amplifier with 17.5 dB gain, operating from 6-17 GHz. It has a max input power of 10 dBm and draws 110 mA at 3.5 V. Ideal for wideband low-power applications, this component offers high performance in plastic/epoxy packaging for surface mount assembly.

WIDE BAND LOW POWER; Maximum Voltage Standing Wave Ratio: 1.7; Maximum Operating Frequency: 2000 MHz; Minimum Operating Temperature: -20 Cel; Characteristic Impedance: 50 ohm; Additional Features: LOW NOISE;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Supply Current: 70 mA;

Broadcom's MGA-23003-TR1G is a GAAS RF amplifier with 32dB gain, operating b/w 3.3-3.8GHz. It has a max input power of 15dBm and is ideal for narrowband medium-power applications in the RF & Microwave field.

WIDE BAND MEDIUM POWER; Terminal Finish: TUNGSTEN NICKEL GOLD; Construction: COMPONENT; Maximum Operating Temperature: 85 Cel; Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 9500 MHz;

HMC794LP3E by Analog Devices is a wide band low power RF amplifier with a max operating frequency of 2 GHz and characteristic impedance of 50 ohm. It can handle up to 13 dBm CW input power, making it suitable for various RF and microwave applications requiring high performance in temperature range from -40°C to 85°C.

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; Minimum Operating Temperature: -40 Cel;