Hittite Microwave - HMC455LP3

WIDE BAND LOW POWER; Technology: GAAS; Power Supplies (V): 3; Minimum Operating Temperature: -55 Cel; Maximum Supply Current: 88 mA; Construction: COMPONENT;

Analog Devices' HMC326MS8GETR is a wide band medium power RF amplifier with 18dB gain and 50 ohm impedance. It operates from 3-4.5GHz, handles up to 15dBm input power, and requires a 5V supply. Ideal for RF & microwave applications requiring high performance in a compact surface mount package.

HMC902LP3E by Analog Devices is a wide band low power RF amplifier with 17 dB gain, operating from 5-10 GHz. It has a max input power of 10 dBm and operates on a 3.5V supply, making it suitable for various RF and microwave applications requiring high performance in a compact package.

NARROW BAND LOW POWER; Characteristic Impedance: 50 ohm; Minimum Operating Temperature: -40 Cel; Minimum Operating Frequency: 7800 MHz; Maximum Operating Frequency: 8700 MHz; Maximum Operating Temperature: 85 Cel;

WIDE BAND LOW POWER; Technology: GAAS; Package Equivalence Code: WAFER; Power Supplies (V): 5; No. of Functions: 1; Additional Features: LOW NOISE;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: BIPOLAR; Minimum Operating Temperature: -45 Cel;

Analog Devices' HMC311LP3ETR is a GAAS RF amplifier with 12dB gain, 50 ohm impedance, and 10 dBm CW input power. It operates from 0 to 6000 MHz, drawing 74mA at 5V. Ideal for wideband low-power applications in temperatures ranging from -40°C to +85°C.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 77 mA;

WIDE BAND HIGH POWER;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: CERAMIC; Technology: GAAS; Maximum Operating Temperature: 85 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;

WIDE BAND MEDIUM POWER; Characteristic Impedance: 50 ohm; Maximum Operating Temperature: 85 Cel; Maximum Voltage Standing Wave Ratio: 2; Gain: 15.5 dB; Construction: COMPONENT;

WIDE BAND LOW POWER; Minimum Operating Temperature: -40 Cel; Gain: 17 dB; JESD-609 Code: e4; Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au); Additional Features: LOW NOISE;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 28; Package Body Material: PLASTIC/EPOXY; Gain: 14 dB; Terminal Finish: Matte Tin (Sn);

WIDE BAND LOW POWER; JESD-609 Code: e4; Construction: COMPONENT; Gain: 10 dB; Minimum Operating Temperature: -40 Cel; Minimum Operating Frequency: 0 MHz;

WIDE BAND LOW POWER; Maximum Operating Frequency: 40000 MHz; Minimum Operating Temperature: -55 Cel; Additional Features: LOW NOISE; JESD-609 Code: e4; Minimum Operating Frequency: 24000 MHz;

MGA-86563-TR1G by Broadcom is a wide band low power RF amplifier with a gain of 13.7 dB. It operates at frequencies ranging from 500 MHz to 6000 MHz and can handle a max input power of 13 dBm. This surface mount component is commonly used in RF and microwave applications requiring amplification within the specified frequency range.

WIDE BAND LOW POWER; Minimum Operating Frequency: 100 MHz; Characteristic Impedance: 50 ohm; Construction: COMPONENT; Maximum Voltage Standing Wave Ratio: 2; Maximum Input Power (CW): 13 dBm;

AMMP-6220-BLK by Broadcom is a wide band low power RF amplifier with a gain of 22 dB. It operates at frequencies ranging from 6 GHz to 20 GHz and has a max input power of 15 dBm. This surface mount component is commonly used in RF and microwave applications.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;