Hamamatsu Photonics Kk - S5971

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000003 s; JESD-609 Code: e0; Minimum Operating Temperature: -40 Cel;

Photo Diodes; Mounting Feature: SURFACE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel; Maximum Response Time: .0000000625 s;

PIN PHOTODIODE; Configuration: SINGLE; Minimum Reverse Breakdown Voltage: 60 V; Infrared (IR) Range: YES; Peak Wavelength (nm): 950; No. of Functions: 1;

AVALANCHE PHOTODIODE; Minimum Reverse Breakdown Voltage: 24.2 V; Maximum Dark Current: 12000 nA; Maximum Operating Temperature: 85 Cel; No. of Functions: 1; Peak Wavelength (nm): 420;

Infineon's BPW34FA is a PIN photodiode with max response time of 0.00000035s and max reverse voltage of 32V. Operating b/w -40°C to 80°C, it's ideal for optoelectronic applications requiring precise light detection in various environments.

The Onsemi QSB34GR is a single PIN photodiode with peak wavelength of 940nm. It operates b/w -25°C to 85°C, with max reverse voltage of 32V. Ideal for infrared applications, it has a size of 4.4mm and nominal light current of 0.037mA.

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 80 Cel; Maximum Reverse Voltage: 7 V; Semiconductor Material: Silicon;

PIN PHOTODIODE; Configuration: SINGLE; Shape: ROUND; Maximum Dark Current: 10 nA; No. of Functions: 1; Nominal Light Current: .005 mA;

AVALANCHE PHOTODIODE;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN; Maximum Response Time: .00000035 s; Maximum Reverse Voltage: 20 V; Maximum Operating Temperature: 100 Cel;

Photo Diodes; Mounting Feature: SURFACE MOUNT; Maximum Operating Temperature: 70 Cel; Maximum Dark Current: 3 nA; Minimum Operating Temperature: -20 Cel;

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 500 nA; Semiconductor Material: Germanium; Maximum Reverse Voltage: 48 V; Minimum Operating Temperature: -40 Cel;

AVALANCHE PHOTODIODE;

Photo Diodes;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN; JESD-609 Code: e3; Size: 5 mm; Semiconductor Material: Silicon;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Semiconductor Material: Silicon; Maximum Response Time: .00000003 s; Minimum Operating Temperature: -50 Cel;

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 2 nA; Maximum Reverse Voltage: 20 V; Semiconductor Material: Silicon;

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Minimum Reverse Breakdown Voltage: 16 V; Nominal Light Current: .04 mA; Maximum Response Time: .00000002 s; Maximum Dark Current: 30 nA;

PIN PHOTODIODE; Infrared (IR) Range: YES; Maximum Dark Current: 20 nA; Configuration: SINGLE; Minimum Reverse Breakdown Voltage: 20 V; No. of Functions: 1;

AVALANCHE PHOTODIODE; Mounting Feature: SURFACE MOUNT; No. of Functions: 1; Size: 1 mm; Minimum Reverse Breakdown Voltage: 24.25 V; Configuration: SINGLE;