Fairchild Semiconductor - QSD123A4R0

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Maximum Response Time: .000007 s; Maximum On State Current: .015 A;

PHOTO TRANSISTOR; Peak Wavelength (nm): 900; Maximum Operating Temperature: 85 Cel; Size: 3.1 mm; Shape: ROUND; No. of Functions: 1;

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -55 Cel; Maximum Power Dissipation: .15 W; Maximum Dark Current: 100 nA; Maximum Operating Temperature: 100 Cel;

Sharp Corporation's PT481E00000F is a 1.6mm PHOTO DARLINGTON phototransistor with peak wavelength of 800nm. It operates b/w -25°C to 85°C, has Tin/Silver/Copper terminal finish, and nominal light current of 10mA. Ideal for applications requiring IR detection with min collector-emitter breakdown voltage of 35V.

PHOTO TRANSISTOR; Terminal Finish: Matte Tin (Sn); Infrared (IR) Range: YES; No. of Functions: 1; Configuration: SINGLE; JESD-609 Code: e3;

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -55 Cel; Maximum Dark Current: 250 nA; Maximum Operating Temperature: 125 Cel; Maximum Power Dissipation: .15 W;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -60 Cel; Minimum Collector-emitter Breakdown Voltage: 50 V; Configuration: SINGLE; Maximum Dark Current: 25 nA;

PHOTO TRANSISTOR;

PHOTO TRANSISTOR; Additional Features: SIDE VIEW; Shape: ROUND; Peak Wavelength (nm): 870; Infrared (IR) Range: YES; Minimum Operating Temperature: -25 Cel;

PHOTO TRANSISTOR; Configuration: SINGLE; Maximum Dark Current: 200 nA; Minimum Collector-emitter Breakdown Voltage: 32 V; Peak Wavelength (nm): 825; No. of Functions: 1;

PHOTO TRANSISTOR; Terminal Finish: Tin/Silver (Sn/Ag); JESD-609 Code: e2; Additional Features: HIGH SENSITIVITY; Configuration: SINGLE; Peak Wavelength (nm): 925;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000008 s; Size: 5 mm; Maximum Dark Current: 100 nA;

BPX81 by Infineon Technologies is an 850nm phototransistor with a max operating temperature of 80°C and a min operating temperature of -40°C. It has a max power dissipation of 0.09W and a max dark current of 200nA. This phototransistor is commonly used in applications requiring through hole mounting and can handle a max on-state current of 0.05A.

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 100 nA; No. of Functions: 1; Infrared (IR) Range: YES; Peak Wavelength (nm): 800;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: MATTE TIN; No. of Functions: 1; Maximum Power Dissipation: .075 W; Nominal Light Current: 1.5 mA;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; Peak Wavelength (nm): 880; Maximum Response Time: .000008 s;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .2 W; Size: 5 mm; Configuration: SINGLE;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; Maximum On State Current: .05 A; Peak Wavelength (nm): 850;

PHOTO TRANSISTOR;