Everlight Electronics - PD15-22C/TR8

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 80 Cel; Minimum Operating Temperature: -40 Cel; Maximum Response Time: .00000002 s;

AVALANCHE PHOTODIODE; Size: 3.93 mm; Minimum Operating Temperature: -40 Cel; Maximum Dark Current: 4000 nA; Peak Wavelength (nm): 420; Infrared (IR) Range: NO;

Photo Diodes;

BPW-34 by Laser Components is a 3mm PIN photodiode with peak wavelength of 900nm. It operates b/w -40 to 100°C, has a reverse breakdown voltage of 60V, and response time of 0.00000035s. Ideal for IR applications, it features matte tin finish and through hole mounting.

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 150 Cel; Minimum Operating Temperature: -65 Cel; Maximum Reverse Voltage: 100 V; Maximum Response Time: .000000004 s;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: Silicon; Maximum Reverse Voltage: 20 V; Minimum Operating Temperature: -40 Cel; Maximum Dark Current: 30 nA;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; Maximum Reverse Voltage: 20 V; Maximum Dark Current: 1 nA;

PIN PHOTODIODE;

Vishay Intertechnology's BPW41N is a 7.5mm PIN photodiode with peak wavelength of 950nm. It operates b/w -40 to 100°C, has reverse breakdown voltage of 60V, and response time of 0.00000005s. Ideal for IR applications, it features matte tin finish and through hole mount.

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 200 nA; Maximum Reverse Voltage: 45 V; Minimum Operating Temperature: -40 Cel; Semiconductor Material: Germanium;

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Nominal Light Current: .001 mA; Maximum Operating Temperature: 100 Cel; Maximum Dark Current: 30 nA;

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: Germanium; Maximum Dark Current: 300 nA; Maximum Reverse Voltage: 40 V; Minimum Operating Temperature: -30 Cel;

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; No. of Functions: 1; Minimum Operating Temperature: -55 Cel; Peak Wavelength (nm): 880; Size: 5 mm;

Photo Diodes; Maximum Operating Temperature: 125 Cel; Minimum Operating Temperature: -40 Cel;

AVALANCHE PHOTODIODE; Maximum Dark Current: 720 nA; Shape: SQUARE; Peak Wavelength (nm): 420; Minimum Reverse Breakdown Voltage: 24.2 V; Configuration: COMPLEX;

Photo Diodes; Peak Wavelength (nm): 840; Size: 2.5 mm; Additional Features: HIGH RELIABILITY; Maximum Dark Current: .001 nA; Configuration: SEPARATE, 6 ELEMENTS;

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Reverse Voltage: 40 V; Semiconductor Material: Germanium; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel;

PIN PHOTODIODE; Terminal Finish: Tin (Sn); JESD-609 Code: e3; Minimum Reverse Breakdown Voltage: 40 V; Shape: ROUND; Maximum Dark Current: 5 nA;

Photo Diodes;

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Nominal Light Current: .04 mA; Maximum Operating Temperature: 100 Cel; Configuration: SINGLE; Maximum Response Time: .00000002 s;