Dover Technologies - 10FV40-FREQ/TBW1-RO/RO

10FV40-FREQ/TBW1-RO/RO by Dover Technologies

Image shown is a representation only.

Manufacturer	Dover Technologies
Manufacturer's Part Number	10FV40-FREQ/TBW1-RO/RO
Description	CAVITY BPF; Maximum Frequency: 3000 MHz; Connector (Input): REMOVABLE SMA; Connector (Output): REMOVABLE SMA; Maximum Operating Temperature: 85 Cel; Manufacturer Series: FV40;
Datasheet	10FV40-FREQ/TBW1-RO/RO Datasheet

10FV40-FREQ/TBW1-RO/RO Technical Details

NAME	DESCRIPTION
Maximum Frequency:	3000 MHz
I/O Impedance:	50 OHM
Voltage Standing Wave Ratio:	1.5
Connector (Input):	REMOVABLE SMA
Connector (Output):	REMOVABLE SMA
Mounting Type:	PANEL MOUNT
Minimum Operating Temperature:	-55 Cel
Maximum No. of Sections:	10
Minimum No. of Sections:	10
Minimum Frequency:	2000 MHz
Additional Features:	THREE DB BANDWIDTH
Filter Type:	CAVITY BPF
Maximum Operating Temperature:	85 Cel
Manufacturer Series:	FV40

Powered by Partstack

Popular Products

BSS123,215

NXP Semiconductors

NXP Semiconductors' BSS123,215 is a N-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 0.17A Drain Current, and 6 ohm On Resistance. With GULL WING terminals and ENHANCEMENT MODE operation, it's ideal for small outline packages in various electronic devices.

SS14

Hitano Enterprise

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

1N4148WT

Onsemi

1N4148WT by Onsemi is a single rectifier diode with a max output current of 0.3A and forward voltage of 0.72V. It has a small outline package style, matte tin terminal finish, and operates at temperatures up to 150°C. Ideal for applications requiring fast reverse recovery time such as power supplies and signal demodulation circuits.

1N4148

Yangzhou Yangjie Electronics

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

LM358N

Onsemi

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

BAV99

National Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

2N7002DWH6327XTSA1

Infineon Technologies

2N7002DWH6327XTSA1 by Infineon: N-CHANNEL FET with 60V DS Breakdown Voltage, 0.3A ID, and 3ohm RDS. Ideal for SWITCHING applications in small outline packages with GULL WING terminals.

1N4148

International Components

RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Reverse Recovery Time: .004 us;

LM107H/883C

National Semiconductor

LM107H/883C by National Semiconductor is a MILITARY-grade Operational Amplifier with +-5/+-15V supplies. Featuring 2000uV max input offset voltage, it operates from -55 to 125 °C. Ideal for applications requiring VOLTAGE-FEEDBACK architecture and frequency compensation.

FDN306P

Onsemi

FDN306P by Onsemi is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max ID of 2.6A and 0.04 ohm RDS(on), suitable for small outline packages at temperatures ranging from -55 to 150°C.