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| Manufacturer | Cypress Semiconductor |
|---|---|
| Manufacturer's Part Number | CY14B104NA-BA25XI |
| Description | NON-VOLATILE SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Supply Current: 70 mA; |
| Datasheet | CY14B104NA-BA25XI Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Standby Current: | .005 Amp |
| Organization: | 256KX16 |
| Maximum Time At Peak Reflow Temperature (s): | 20 |
| Maximum Seated Height: | 1.2 mm |
| Minimum Supply Voltage (Vsup): | 2.7 V |
| Sub-Category: | SRAMs |
| Surface Mount: | YES |
| Maximum Supply Current: | 70 mA |
| Terminal Finish: | Tin/Silver/Copper (Sn/Ag/Cu) |
| No. of Terminals: | 48 |
| No. of Words: | 262144 words |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | GRID ARRAY, THIN PROFILE, FINE PITCH |
| Technology: | CMOS |
| JESD-30 Code: | R-PBGA-B48 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | BALL |
| Operating Mode: | ASYNCHRONOUS |
| Maximum Operating Temperature: | 85 Cel |
| Package Code: | TFBGA |
| Width: | 6 mm |
| Moisture Sensitivity Level (MSL): | 3 |
| Memory Density: | 4194304 bit |
| Memory IC Type: | NON-VOLATILE SRAM |
| JESD-609 Code: | e1 |
| Minimum Operating Temperature: | -40 Cel |
| Memory Width: | 16 |
| No. of Functions: | 1 |
| Qualification: | Not Qualified |
| Package Equivalence Code: | BGA48,6X8,30 |
| Length: | 10 mm |
| Maximum Access Time: | 25 ns |
| No. of Words Code: | 256K |
| Nominal Supply Voltage / Vsup (V): | 3 |
| Peak Reflow Temperature (C): | 260 |
| Parallel or Serial: | PARALLEL |
| Terminal Pitch: | .75 mm |
| Temperature Grade: | INDUSTRIAL |
| Maximum Supply Voltage (Vsup): | 3.6 V |
| Power Supplies (V): | 3/3.3 |
