Crimson Semiconductor - BDX53C

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;

TIP116G by Onsemi is a PNP power BJT with Darlington configuration, ideal for amplifier applications. It features a max collector-emitter voltage of 80V, max operating temperature of 150°C, and min DC current gain of 500 (hFE). The package style is flange mount with through-hole terminals.

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON;

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;

Rectron's BCP5616 is a NPN BJT transistor with VCEsat of 0.5V, hFE of 25, and IC of 1A. Ideal for amplifier applications, it has a max power dissipation of 1.5W and operates up to 150°C. Its small outline package with Gull Wing terminals makes it suitable for surface mount designs.

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Terminal Finish: TIN;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Collector Current (IC): 15 A; Package Style (Meter): FLANGE MOUNT;

BD139.10 by Motorola is a NPN power BJT with 3 terminals and max. power dissipation of 8W. It is ideal for switching applications, offering a max. collector-emitter voltage of 80V and max. collector current of 1.5A, with a min DC current gain of 63 (hFE).

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 10 A; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Collector Current (IC): 15 A; Qualification: Not Qualified;

MJD31CT4 by Onsemi is a NPN BJT transistor with 15W power dissipation, 100V max collector-emitter voltage, and 3A max collector current. Ideal for amplifier applications, it has a small outline package style and operates up to 150°C. With a transition frequency of 3MHz, it is suitable for surface mount designs.

JANTXV2N3055 by Microchip Tech is a NPN BJT with 115W power dissipation, 70V max collector-emitter voltage, and 15A max collector current. Ideal for high-power applications in military electronics due to MIL-19500/407D standard compliance and flange mount package style.

2N3055AG by Onsemi is a NPN BJT transistor with 115W power dissipation, 60V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications due to its single configuration and 0.8MHz transition frequency.

Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Package Shape: RECTANGULAR; No. of Elements: 1;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 15 A; Package Body Material: PLASTIC/EPOXY;