Changzhou Galaxy Century Microelectronics - GBU8J

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GBU8J by Changzhou Galaxy Century Microelectronics

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Manufacturer Changzhou Galaxy Century Microelectronics
Manufacturer's Part Number GBU8J
Description BRIDGE RECTIFIER DIODE; Surface Mount: NO; Peak Reflow Temperature (C): 260; Diode Element Material: SILICON; Maximum Repetitive Peak Reverse Voltage: 600 V; Maximum Forward Voltage (VF): 1 V;
Datasheet GBU8J Datasheet
NAME DESCRIPTION
Maximum Non Repetitive Peak Forward Current: 200 A
Diode Element Material: SILICON
Maximum Forward Voltage (VF): 1 V
Config: BRIDGE, 4 ELEMENTS
Diode Type: BRIDGE RECTIFIER DIODE
No. of Elements: 4
Maximum Output Current: 8 A
Maximum Repetitive Peak Reverse Voltage: 600 V
Maximum Operating Temperature: 150 Cel
Peak Reflow Temperature (C): 260
Sub-Category: Bridge Rectifier Diodes
Surface Mount: NO
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