Central Semiconductor - BD679A

  1. Home
  2. Central Semiconductor - BD679A
BD679A by Central Semiconductor

Image shown is a representation only.

Manufacturer Central Semiconductor
Manufacturer's Part Number BD679A
Description NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 1 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
Datasheet BD679A Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 1 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 4 A
Configuration: DARLINGTON
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Surface Mount: NO
Terminal Finish: TIN LEAD
No. of Terminals: 3
Maximum Power Dissipation (Abs): 40 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
JEDEC-95 Code: TO-126
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 750
JESD-609 Code: e0
Minimum Operating Temperature: -65 Cel
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 80 V
Maximum VCEsat: 2.8 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

JANTX2N3055 by Solitron Devices

JANTX2N3055

Solitron Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
TIP41C by Baneasa S A

TIP41C

Baneasa S A

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 6 A; Terminal Form: THROUGH-HOLE; Package Style (Meter): FLANGE MOUNT;
NJVMJD44H11G by Onsemi

NJVMJD44H11G

Onsemi

NJVMJD44H11G by Onsemi is a NPN BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it has a hFE of min. 40 and operates up to 150°C. Suitable for surface mount designs in automotive electronics (AEC-Q101 compliant).
TIP35C by Central Semiconductor

TIP35C

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
D44H8 by National Semiconductor

D44H8

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 8 A;
MJD127T4 by Motorola

MJD127T4

Motorola

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 8 A; Maximum VCEsat: 4 V;
TIP31C by Motorola

TIP31C

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 3 A; Transistor Element Material: SILICON;
TIP117 by Continental Device India

TIP117

Continental Device India

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Package Style (Meter): FLANGE MOUNT;
TIP117 by STMicroelectronics

TIP117

STMicroelectronics

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Terminal Form: THROUGH-HOLE;
TIP42A by Baneasa S A

TIP42A

Baneasa S A

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 6 A; JEDEC-95 Code: TO-220AB; Terminal Position: SINGLE;
TIP35C by Comset Semiconductors

TIP35C

Comset Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
JANTX2N2219A by Vpt Components

JANTX2N2219A

Vpt Components

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): .8 A; Package Shape: ROUND;
JANTX2N3055 by Cobham Plc

JANTX2N3055

Cobham Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Package Body Material: METAL; No. of Terminals: 2;
BD679 by Motorola

BD679

Motorola

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 4 A; Maximum Power Dissipation Ambient: 40 W; Transistor Application: AMPLIFIER;
MJE3055T by Onsemi

MJE3055T

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 10 A;
TIP120 by Power Innovations

TIP120

Power Innovations

Power Bipolar Transistors; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Package Body Material: PLASTIC/EPOXY; JEDEC-95 Code: TO-220AB; Terminal Form: THROUGH-HOLE;
TIP122 by Texas Instruments

TIP122

Texas Instruments

TIP122 by Texas Instruments is a NPN Darlington transistor with max VCEsat of 4V, hFE of 1000, and IC of 5A. Ideal for switching applications due to its high current gain and low saturation voltage. With a max power dissipation of 65W, it can handle high-power loads efficiently.
TIP125 by Plessey Semiconductors Discrete Components Div

TIP125

Plessey Semiconductors Discrete Components Div

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 8 A; Terminal Position: SINGLE;
TIP50 by Central Semiconductor

TIP50

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
BD139 by Fairchild Semiconductor

BD139

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;