Api Technologies - 2N3055

TIP32CG by Onsemi is a PNP power BJT with 3A max collector current, 40W power dissipation, and 100V max collector-emitter voltage. Ideal for switching applications, it has a min hFE of 10 and operates up to 150°C. The transistor comes in a rectangular package with through-hole terminals.

The NXP Semiconductors BU508AW is a single NPN BJT transistor for switching applications. With a max VCEsat of 1V, it can handle up to 8A collector current and 125W power dissipation. Operating at temperatures up to 150°C, it has a max collector-emitter voltage of 700V making it suitable for high-power electronic circuits.

NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Collector Current (IC): 1 A; Terminal Form: THROUGH-HOLE; Minimum DC Current Gain (hFE): 30;

Secos TIP31-C is a NPN BJT transistor with max VCEsat of 1.2V, ideal for switching applications. It has a max power dissipation of 40W and max collector-emitter voltage of 100V. With hFE of 10, it operates b/w -65 to 150°C, suitable for high-power circuits in various electronic devices.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;

D44H-8 by Loras Industries is a NPN Power BJT with 50W max power dissipation, 60V max collector-emitter voltage, and 10A max collector current. Ideal for applications requiring high power amplification in through-hole mounting configurations.

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;

STMicroelectronics' MJD31CT4-A is a NPN BJT transistor with 100V VCEO, 3A IC, and 15W Ptot. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mounting.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Additional Features: LOGIC LEVEL COMPATIBLE; JESD-30 Code: R-PDIP-T18;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 6 A; Maximum VCEsat: 1.5 V;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Minimum DC Current Gain (hFE): 20; JESD-30 Code: O-MBFM-P2;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;

BD13910 by Fairchild Semiconductor is a NPN BJT transistor with 80V VCEO, 1.5A IC, and 13W Ptot. Ideal for switching applications, it has hFE of 63 and fT of 250MHz. The package is through-hole with a flange mount style in plastic/epoxy material.

NPN; Surface Mount: NO; Maximum Collector Current (IC): 3 A; Transistor Element Material: SILICON; No. of Terminals: 3; JESD-30 Code: R-PSFM-T3;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Operating Temperature: 150 Cel;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 500;

The Onsemi 2N3055H is a NPN power BJT with max. collector-emitter voltage of 60V, max. collector current of 15A, and max. power dissipation of 115W. It is commonly used for switching applications due to its single configuration and silicon transistor element material.