Analog Devices - HMC907APM5E

WIDE BAND MEDIUM POWER; Minimum Operating Temperature: -40 Cel; Minimum Operating Frequency: 0 MHz; Maximum Operating Frequency: 6000 MHz; Maximum Operating Temperature: 85 Cel; Terminal Finish: Matte Tin (Sn);

WIDE BAND LOW POWER; Maximum Operating Temperature: 50 Cel; Maximum Input Power (CW): 13 dBm; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 250 MHz; Minimum Operating Frequency: 10 MHz;

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Voltage Standing Wave Ratio: 5;

Analog Devices' HMC462 RF amplifier offers 12.5 dB gain, 18 dBm CW input power, and 1.25 max VSWR. Ideal for wideband low-power applications from 2-20 GHz, with PHEMT tech and surface mounting feature.

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 9; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Temperature: -40 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Operating Frequency: 1300 MHz;

Analog Devices' MAX2232EEE+ is a RF amplifier with 23.9 dB gain, operating b/w 800-1000 MHz. It has a max input power of 10 dBm and VSWR of 1.5, ideal for narrowband medium power applications in temperatures ranging from -40 to 85°C.

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 13 dBm; Minimum Operating Frequency: 10 MHz; Minimum Operating Temperature: -54 Cel; Maximum Operating Temperature: 85 Cel;

HMC460LC5TR by Analog Devices is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 0 to 20,000 MHz, handling up to 18 dBm CW input power. This ceramic-packaged component is ideal for RF and microwave applications requiring high performance in a compact form factor.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Maximum Input Power (CW): 15 dBm;

WIDE BAND MEDIUM POWER;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 13 dBm;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 8;

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Maximum Operating Frequency: 11000 MHz; Maximum Voltage Standing Wave Ratio: 3; Minimum Operating Temperature: -40 Cel;

Analog Devices' HMC455LP3 is a GAAS RF amplifier with 9dB gain, operating from 1700-2500MHz. It has a max input power of 25dBm and VSWR of 1.4, suitable for narrowband medium-power applications in RF & microwave systems. The component features a plastic/epoxy package, surface mounting, and operates b/w -40 to 85°C.

Infineon's BGA715N7E6327XTSA2 is a RF amplifier with 20dB gain, operating from 1550-1615MHz. It can handle up to 10dBm input power and has a characteristic impedance of 50 ohm. Ideal for narrowband low-power applications in temperatures ranging from -40°C to 85°C.

WIDE BAND HIGH POWER;

HMC478MP86TR by Analog Devices is a wide band low power RF amplifier with a max operating temperature of 85°C and a min operating temperature of -40°C. It has 1 function, operates on a 5V power supply, and is mounted using surface mount technology. This amplifier is commonly used in RF and microwave applications.

Qorvo's QPM1000 is a wide band low power RF amplifier with 17 dB gain, operating from 2-20 GHz. It can handle up to 33 dBm CW input power and has a characteristic impedance of 50 ohms. Ideal for applications requiring surface mount construction in RF & microwave systems.