Analog Devices - HMC453ST89ETR

TQP3M9009 by Qorvo is a wide band medium power RF amplifier with 20 dB gain and 50 ohm impedance. It operates from 50 MHz to 4000 MHz, with a max input power of 23 dBm. This component is ideal for applications requiring high frequency amplification in RF and microwave systems.

Qorvo's QPA1019D is a GAN technology RF amplifier with 34.4 dB gain, 25 dBm CW input power, and 4 VSWR. Ideal for wideband high-power applications from 4500 MHz to 7000 MHz, it operates at temperatures ranging from -40°C to 85°C.

WIDE BAND HIGH POWER; Terminal Finish: Gold (Au); JESD-609 Code: e4;

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; JESD-609 Code: e3; Maximum Operating Temperature: 85 Cel;

Analog Devices' HMC994APM5E is a wide band medium power RF amplifier with 13 dB gain and 25 dBm CW input power. With a VSWR of 7, it operates from -40°C to 85°C, covering frequencies from 0 MHz to 28 GHz. Ideal for RF and microwave applications requiring high performance amplification in various environments.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; No. of Functions: 1;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: TSSOP6,.08;

Qorvo's RF6886SR is a wide band high power amplifier with 31 dB gain, operating from 433 MHz to 470 MHz. It has a max input power of 12 dBm and VSWR of 5, suitable for RF & microwave applications requiring high power amplification in plastic/epoxy package.

WIDE BAND LOW POWER; Terminal Finish: TIN BISMUTH; JESD-609 Code: e6;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 85 Cel; Maximum Voltage Standing Wave Ratio: 10;

WIDE BAND LOW POWER; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Input Power (CW): 5 dBm; Maximum Operating Frequency: 3600 MHz; Characteristic Impedance: 50 ohm; Gain: 15.5 dB;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 14.6 dB;

HMC372LP3ETR by Analog Devices is a wide band low power RF amplifier with 1 function and 16 terminals. It operates at temperatures ranging from -40 to 85°C and requires a 5V power supply. This surface mount device is made of plastic/epoxy and is commonly used in RF and microwave applications.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 7.2;

WIDE BAND LOW POWER;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Package Equivalence Code: LCC24,.16SQ,20;

ADL9005ACPZN by Analog Devices is a wide band low power RF amplifier with 17 dB gain, operating from 10 MHz to 26500 MHz. It has a max input power of 22 dBm and VSWR of 1.49, suitable for RF & microwave applications requiring high performance amplification in plastic/epoxy package.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: LCC12,.12SQ,20;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: PHEMT; Maximum Operating Temperature: 85 Cel;