Ampleon Netherlands B V - BLF571,112

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 800 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Body Material: PLASTIC/EPOXY;

STMicroelectronics PD55003TR-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage and 2.5A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features ENHANCEMENT MODE operation, 31.7W Power Dissipation, and operates up to 165°C temperature.

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 4; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Maximum Drain Current (ID): 1 A; Case Connection: SOURCE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 59 W; Maximum Drain Current (ID): 5 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: JUNCTION; Transistor Application: AMPLIFIER; Package Shape: RECTANGULAR;

RF Power Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1; Terminal Position: DUAL;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Position: DUAL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 120 V; No. of Terminals: 6; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 165 W; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Qualification: Not Qualified;

RF Power Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum DS Breakdown Voltage: 500 V; Terminal Position: SINGLE; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 165 Cel; Transistor Element Material: SILICON; No. of Terminals: 2;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Terminal Position: DUAL; Transistor Application: AMPLIFIER;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

NXP's MRF7P20040HSR3 is a ceramic-metal sealed RF FET with N-channel, common source configuration. Ideal for amplifier applications in S band frequencies, it operates at max 225°C with 65V breakdown voltage. This flatpack transistor has 2 elements, 4 terminals, and uses MOSFET technology.

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Terminal Form: FLAT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 40;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 190 W; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 65 V;