Agilent Technologies - ATF-54143-BLKG

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Finish: TIN; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Qualification: Not Qualified;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Transistor Element Material: SILICON; No. of Terminals: 3;

RF Small Signal Field-Effect Transistors; Configuration: SINGLE; Surface Mount: NO; Package Body Material: METAL; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G4; Terminal Form: GULL WING; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): .4 pF; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 4; Terminal Position: DUAL;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 4; Additional Features: LOW NOISE, HIGH RELIABILITY; Package Style (Meter): MICROWAVE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Finish: TIN LEAD; Terminal Position: BOTTOM; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; JESD-30 Code: O-PBCY-T3; Terminal Form: THROUGH-HOLE;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Minimum DS Breakdown Voltage: 7 V; Maximum Feedback Capacitance (Crss): .05 pF; Package Style (Meter): SMALL OUTLINE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; No. of Terminals: 3; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Qualification: Not Qualified; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; Operating Mode: DEPLETION MODE; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Transistor Element Material: GALLIUM ARSENIDE; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Shape: ROUND; Package Style (Meter): CYLINDRICAL; Field Effect Transistor Technology: JUNCTION;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Highest Frequency Band: VERY HIGH FREQUENCY BAND; JEDEC-95 Code: TO-236AB;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: RADIAL; Transistor Element Material: SILICON; Operating Mode: DUAL GATE, DEPLETION MODE;

ATF-55143-TR1G by Broadcom is an N-channel RF FET with 15.5 dB power gain, ideal for amplifier applications in C band frequencies. It features a max drain current of 0.1 A, operating at up to 150°C with a power dissipation of 0.27 W in a small outline package suitable for surface mount assembly.