RF/Microwave Attenuators

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Nominal Attenuation Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Minimum Operating Temperature Terminal Finish Maximum Insertion Loss Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

HMC425LP3

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

30 dBm

31.5 dB

COMPONENT

5

LCC16,.12SQ,20

50 ohm

RF/Microwave Attenuators

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

4.3 dB

e0

2200 MHz

8000 MHz

HMC307QS16GE

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

26.02 dBm

31 dB

6 mA

COMPONENT

-5

SSOP16,.25

50 ohm

RF/Microwave Attenuators

85 Cel

-40 Cel

Matte Tin (Sn)

2.7 dB

e3

0 MHz

4000 MHz

HMC473MS8ETR

Analog Devices

VARIABLE ATTENUATOR

29 dBm

29 dB

COMPONENT

50 ohm

85 Cel

-40 Cel

Matte Tin (Sn)

3.5 dB

e3

450 MHz

2200 MHz

HMC305ALP4TR

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

24

PLASTIC/EPOXY

GAAS

3/5

LCC24,.16SQ,20

RF/Microwave Attenuators

85 Cel

-40 Cel

HMC424LP3ETR

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

25.05 dBm

31.5 dB

5 mA

COMPONENT

-5

LCC16,.12SQ,20

50 ohm

RF/Microwave Attenuators

85 Cel

-55 Cel

Matte Tin (Sn)

4.6 dB

e3

0 MHz

13000 MHz

HMC424LP3

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

25.05 dBm

31.5 dB

5 mA

COMPONENT

-5

LCC16,.12SQ,20

50 ohm

RF/Microwave Attenuators

85 Cel

-55 Cel

Tin/Lead (Sn/Pb)

4.6 dB

e0

0 MHz

13000 MHz

HMC468LP3TR

Analog Devices

VARIABLE ATTENUATOR

30 dBm

7 dB

COMPONENT

50 ohm

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

1.8 dB

e0

0 MHz

6000 MHz

HMC629LP4ERTR

Analog Devices

SURFACE MOUNT

24

PLASTIC/EPOXY

GAAS

5

LCC24,.16SQ,20

RF/Microwave Attenuators

85 Cel

-40 Cel

HMC941LP4

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

24

PLASTIC/EPOXY

GAAS

26.99 dBm

15.5 dB

6.5 mA

COMPONENT

+-5

LCC24,.16SQ,20

50 ohm

RF/Microwave Attenuators

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

6.5 dB

e0

100 MHz

33000 MHz

HMC307QS16GTR

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

6 mA

-5

SSOP16,.25

RF/Microwave Attenuators

85 Cel

-40 Cel

HMC654LP2E

Analog Devices

FIXED ATTENUATOR

SURFACE MOUNT

6

PLASTIC/EPOXY

25.05 dBm

4 dB

COMPONENT

SOLCC6,.08,25

50 ohm

RF/Microwave Attenuators

85 Cel

-40 Cel

MATTE TIN

e3

0 MHz

25000 MHz

ADRF5740BCCZN-R7

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

16

PLASTIC/EPOXY

25 dBm

1.49

22 dB

COMPONENT

-3.3, 3.3

LCC16,.1SQ,16

50 ohm

105 Cel

-40 Cel

10 MHz

60000 MHz

HMC335G16

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

16

METAL

GAAS

26.02 dBm

31 dB

6 mA

COMPONENT

-5

QFP16,.45SQ,30

50 ohm

RF/Microwave Attenuators

85 Cel

-40 Cel

Gold (Au) - with Nickel (Ni) barrier

2.8 dB

e4

0 MHz

3000 MHz

HMC624ACPSZ-EP-PT

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

24

PLASTIC/EPOXY

GAAS

25 dBm

31.5 dB

COMPONENT

3/5

LCC24,.16SQ,20

105 Cel

-55 Cel

3.8 dB

100 MHz

6000 MHz

HMC603MS10

Analog Devices

VARIABLE ATTENUATOR

30 dBm

15.5 dB

COMPONENT

50 ohm

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

3.1 dB

e0

700 MHz

3800 MHz

ADRF5730

Analog Devices

VARIABLE ATTENUATOR

27.99 dBm

31.5 dB

COMPONENT

50 ohm

105 Cel

-55 Cel

I/P POWER-MAX(PEAK)=1.26W

100 MHz

40000 MHz

HMC468LP3E

Analog Devices

VARIABLE ATTENUATOR

30 dBm

7 dB

COMPONENT

50 ohm

85 Cel

-40 Cel

Matte Tin (Sn)

1.8 dB

e3

0 MHz

6000 MHz

HMC657LP2

Analog Devices

FIXED ATTENUATOR

25 dBm

15 dB

COMPONENT

50 ohm

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

e0

0 MHz

25000 MHz

HMC424LP3TR

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

25.05 dBm

31.5 dB

5 mA

COMPONENT

-5

LCC16,.12SQ,20

50 ohm

RF/Microwave Attenuators

85 Cel

-55 Cel

Tin/Lead (Sn85Pb15)

4.6 dB

e0

0 MHz

13000 MHz

HMC654LP2ETR

Analog Devices

FIXED ATTENUATOR

SURFACE MOUNT

6

PLASTIC/EPOXY

SOLCC6,.08,25

RF/Microwave Attenuators

85 Cel

-40 Cel

HMC346MS8GTR

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

18.06 dBm

32 dB

COMPONENT

TSSOP8,.19

50 ohm

RF/Microwave Attenuators

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

2.5 dB

e0

0 MHz

8000 MHz

HMC624LFLP4ETR

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

24

PLASTIC/EPOXY

GAAS

5

LCC24,.16SQ,20

RF/Microwave Attenuators

85 Cel

-40 Cel

HMC800LP3E

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

30 dBm

10 dB

COMPONENT

5

LCC16,.12SQ,20

50 ohm

RF/Microwave Attenuators

85 Cel

-40 Cel

Matte Tin (Sn)

3.5 dB

TTL COMPATIBLE

e3

0 MHz

10000 MHz

HMC346C8

Analog Devices

VARIABLE ATTENUATOR

18.06 dBm

30 dB

COMPONENT

50 ohm

85 Cel

-40 Cel

Gold (Au) - with Nickel (Ni) barrier

3.1 dB

e4

0 MHz

8000 MHz

HMC629LP4

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

24

PLASTIC/EPOXY

GAAS

27.99 dBm

45 dB

COMPONENT

5

LCC24,.16SQ,20

50 ohm

RF/Microwave Attenuators

85 Cel

-40 Cel

TIN LEAD

5 dB

CMOS COMPATIBLE

e0

0 MHz

6000 MHz

HMC346C8TR

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

8

CERAMIC

GAAS

SOP8,.3

RF/Microwave Attenuators

85 Cel

-40 Cel

HMC425ALP3ETR

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

27 dBm

31.5 dB

COMPONENT

5

LCC16,.12SQ,20

50 ohm

85 Cel

-40 Cel

Matte Tin (Sn) - annealed

4.7 dB

e3

2200 MHz

8000 MHz

HMC939LP4

Analog Devices

VARIABLE ATTENUATOR

25.05 dBm

31 dB

COMPONENT

50 ohm

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

7.5 dB

e0

100 MHz

33000 MHz

HMC812LC4

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

24

CERAMIC

GAAS

30 dBm

30 dB

COAXIAL

LCC24,.16SQ,20

50 ohm

RF/Microwave Attenuators

85 Cel

-40 Cel

GOLD OVER NICKEL

4 dB

e4

5000 MHz

30000 MHz

HMC939

Analog Devices

VARIABLE ATTENUATOR

GAAS

24.91 dBm

31 dB

7 mA

COMPONENT

5

DIE OR CHIP

50 ohm

RF/Microwave Attenuators

85 Cel

-55 Cel

Gold (Au)

7.5 dB

e4

100 MHz

40000 MHz

HMC470ATCPZ-EP-PT

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

16

PLASTIC/EPOXY

25 dBm

31 dB

COMPONENT

3/5

LCC16,.12SQ,20

50 ohm

125 Cel

-55 Cel

2 dB

CMOS COMPATIBLE

100 MHz

3000 MHz

HMC346G8

Analog Devices

VARIABLE ATTENUATOR

18.06 dBm

30 dB

COMPONENT

50 ohm

85 Cel

-40 Cel

Gold (Au) - with Nickel (Ni) barrier

3.5 dB

e4

0 MHz

8000 MHz

HMC658

Analog Devices

FIXED ATTENUATOR

GAAS

25.05 dBm

20 dB

COMPONENT

DIE OR CHIP

50 ohm

RF/Microwave Attenuators

85 Cel

-55 Cel

GOLD

e4

0 MHz

50000 MHz

HMC603QS16E

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

30 dBm

15.5 dB

COMPONENT

3/5

SSOP16,.25

50 ohm

RF/Microwave Attenuators

85 Cel

-40 Cel

Matte Tin (Sn)

3 dB

e3

700 MHz

3800 MHz

HMC657

Analog Devices

FIXED ATTENUATOR

GAAS

25.05 dBm

15 dB

COMPONENT

DIE OR CHIP

50 ohm

RF/Microwave Attenuators

85 Cel

-55 Cel

GOLD

e4

0 MHz

50000 MHz

HMC467LP3E

Analog Devices

VARIABLE ATTENUATOR

30 dBm

6 dB

COMPONENT

50 ohm

85 Cel

-40 Cel

Matte Tin (Sn)

1.2 dB

e3

0 MHz

6000 MHz

HMC346LP3E

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

18.06 dBm

27 dB

COMPONENT

LCC16,.12SQ,20

50 ohm

RF/Microwave Attenuators

85 Cel

-40 Cel

Matte Tin (Sn)

3.3 dB

e3

0 MHz

14000 MHz

HMC801LP3ETR

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

5

LCC16,.12SQ,20

RF/Microwave Attenuators

85 Cel

-40 Cel

HMC812ALC4

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

24

CERAMIC

GAAS

30 dBm

35 dB

COMPONENT

LCC24,.16SQ,20

50 ohm

85 Cel

-40 Cel

GOLD OVER NICKEL

e4

5000 MHz

30000 MHz

HMC939LP4E

Analog Devices

VARIABLE ATTENUATOR

25.05 dBm

31 dB

COMPONENT

50 ohm

85 Cel

-40 Cel

Matte Tin (Sn) - with Nickel (Ni) barrier

7.5 dB

e3

100 MHz

33000 MHz

HMC629LP4TR

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

24

PLASTIC/EPOXY

GAAS

5

LCC24,.16SQ,20

RF/Microwave Attenuators

85 Cel

-40 Cel

HMC658LP2TR

Analog Devices

FIXED ATTENUATOR

SURFACE MOUNT

6

PLASTIC/EPOXY

SOLCC6,.08,25

RF/Microwave Attenuators

85 Cel

-40 Cel

HMC650

Analog Devices

FIXED ATTENUATOR

GAAS

0 dB

COMPONENT

DIE OR CHIP

50 ohm

RF/Microwave Attenuators

85 Cel

-55 Cel

Gold (Au)

e4

0 MHz

50000 MHz

HMC941A

Analog Devices

VARIABLE ATTENUATOR

9

GAAS

27 dBm

15.5 dB

7 mA

COMPONENT

+-5

DIE OR CHIP

50 ohm

85 Cel

-55 Cel

5.1 dB

100 MHz

30000 MHz

HMC307QS16GETR

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

26.02 dBm

31 dB

6 mA

COMPONENT

-5

SSOP16,.25

50 ohm

RF/Microwave Attenuators

85 Cel

-40 Cel

Matte Tin (Sn)

2.7 dB

e3

0 MHz

4000 MHz

HMC473MS8TR

Analog Devices

VARIABLE ATTENUATOR

HMC941LP4ETR

Analog Devices

VARIABLE ATTENUATOR

SURFACE MOUNT

24

PLASTIC/EPOXY

GAAS

6.5 mA

+-5

LCC24,.16SQ,20

RF/Microwave Attenuators

85 Cel

-40 Cel

HMC651

Analog Devices

FIXED ATTENUATOR

GAAS

0 dB

COMPONENT

DIE OR CHIP

50 ohm

RF/Microwave Attenuators

85 Cel

-55 Cel

Gold (Au)

e4

0 MHz

50000 MHz

RF/Microwave Attenuators

RF/Microwave attenuators are electronic devices designed to reduce the strength or amplitude of an RF or microwave signal without significantly affecting its waveform. They are used in a variety of applications, including signal conditioning, power level control, and impedance matching.

There are various types of RF/Microwave attenuators, including fixed, variable, and programmable. Fixed attenuators provide a fixed amount of attenuation and are used in applications where the signal level needs to be reduced by a specific amount. Variable attenuators allow for the adjustment of the signal level by rotating a knob or sliding a lever, and are used in applications where the signal level needs to be continuously adjusted. Programmable attenuators can be controlled electronically and offer greater flexibility in adjusting the signal level.

Attenuators can be designed using different technologies, such as resistive, capacitive, and diode-based. Resistive attenuators use resistors to dissipate energy and reduce signal strength. Capacitive attenuators use capacitors to block high-frequency signals and allow low-frequency signals to pass through. Diode-based attenuators use PIN diodes or varactor diodes to control signal strength.

RF/Microwave attenuators are used in a wide range of applications, including in wireless communication systems, test and measurement equipment, radar systems, and satellite communication systems. They play an important role in controlling signal levels and ensuring the integrity of signals in these systems.