Part | RoHS | Manufacturer | Optoelectronic Type | Mounting Feature | Terminal Finish | Configuration | Size | Maximum Dark Current | Maximum Supply Voltage | No. of Functions | Infrared (IR) Range | Peak Wavelength (nm) | Packing Method | Maximum Response Time | Sub-Category | Maximum Reverse Voltage | Semiconductor Material | Maximum Operating Temperature | Minimum Reverse Breakdown Voltage | Shape | Minimum Operating Temperature | Additional Features | Nominal Light Current | JESD-609 Code |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Osram Opto Semiconductors |
PIN PHOTODIODE |
SINGLE |
2.65 mm |
30 nA |
1 |
YES |
880 |
100 Cel |
16 V |
SQUARE |
-40 Cel |
.023 mA |
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|
Onsemi |
AVALANCHE PHOTODIODE |
COMPLEX |
3.07 mm |
720 nA |
1 |
NO |
420 |
85 Cel |
24.2 V |
SQUARE |
-40 Cel |
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|
Vishay Intertechnology |
PIN PHOTODIODE |
SURFACE MOUNT |
MATTE TIN |
SINGLE |
1.8 mm |
10 nA |
1 |
YES |
940 |
Photo Diodes |
60 V |
Silicon |
100 Cel |
32 V |
ROUND |
-40 Cel |
DAY LIGHT FILTER, HIGH SENSITIVITY |
.012 mA |
e3 |
||||
|
Onsemi |
AVALANCHE PHOTODIODE |
SURFACE MOUNT |
COMPLEX |
1 mm |
16 nA |
420 |
TR |
Silicon |
85 Cel |
24.2 V |
RECTANGULAR |
-40 Cel |
LOW NOISE |
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|
Onsemi |
AVALANCHE PHOTODIODE |
SURFACE MOUNT |
COMPLEX |
3 mm |
443 nA |
420 |
TR |
Silicon |
85 Cel |
24.2 V |
SQUARE |
-40 Cel |
LOW NOISE |
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|
Onsemi |
AVALANCHE PHOTODIODE |
COMPLEX |
3.07 mm |
720 nA |
1 |
NO |
420 |
85 Cel |
24.2 V |
SQUARE |
-40 Cel |
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|
Hamamatsu Photonics Kk |
AVALANCHE PHOTODIODE |
RADIAL MOUNT |
SINGLE |
2.4 mm |
.005 nA |
1 |
YES |
960 |
Photo Diodes |
30 V |
Silicon |
100 Cel |
SQUARE |
-40 Cel |
HIGH RELIABILITY |
.006 mA |
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|
Vishay Intertechnology |
PIN PHOTODIODE |
SURFACE MOUNT |
SINGLE |
2 mm |
3 nA |
1 |
YES |
900 |
Photo Diodes |
60 V |
Silicon |
100 Cel |
60 V |
SQUARE |
-40 Cel |
HIGH SENSITIVITY |
.003 mA |
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|
Tt Electronics Plc |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
SINGLE |
8.13 mm |
25 nA |
1 |
.00000005 s |
Photo Diodes |
32 V |
Silicon |
125 Cel |
32 V |
ROUND |
-65 Cel |
.12 mA |
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|
Tt Electronics Plc |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
SINGLE |
8.13 mm |
25 nA |
1 |
.00000005 s |
Photo Diodes |
32 V |
Silicon |
125 Cel |
32 V |
ROUND |
-65 Cel |
.04 mA |
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|
Hamamatsu Photonics Kk |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
SINGLE |
3.6 mm |
10 nA |
1 |
YES |
960 |
.00000001 s |
Photo Diodes |
30 V |
Silicon |
100 Cel |
30 V |
SQUARE |
-40 Cel |
HIGH RELIABILITY, HIGH SENSITIVITY |
.013 mA |
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|
Osram Opto Semiconductors |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
5 nA |
.00000001 s |
Photo Diodes |
30 V |
Silicon |
100 Cel |
-40 Cel |
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|
Osram Opto Semiconductors |
AVALANCHE PHOTODIODE |
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|
Laser Components |
AVALANCHE PHOTODIODE |
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|
Osram Opto Semiconductors |
PIN PHOTODIODE |
SURFACE MOUNT |
SINGLE |
2.65 mm |
30 nA |
1 |
YES |
940 |
TR, 7 INCH |
32 V |
Silicon |
100 Cel |
SQUARE |
-40 Cel |
.08 mA |
||||||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
||||||||||||||||||||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
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|
Vishay Intertechnology |
PIN PHOTODIODE |
SURFACE MOUNT |
SINGLE |
10 nA |
1 |
YES |
950 |
TR, 7 INCH |
20 V |
Silicon |
110 Cel |
20 V |
SQUARE |
-40 Cel |
AEC-Q101 |
.018 mA |
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|
Vishay Intertechnology |
PIN PHOTODIODE |
SINGLE |
5 mm |
5 nA |
1 |
YES |
940 |
100 Cel |
60 V |
ROUND |
-40 Cel |
.055 mA |
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Onsemi |
AVALANCHE PHOTODIODE |
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Onsemi |
AVALANCHE PHOTODIODE |
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|
Osram Opto Semiconductors |
PIN PHOTODIODE |
SINGLE |
2.2 mm |
30 nA |
1 |
YES |
950 |
100 Cel |
20 V |
SQUARE |
-40 Cel |
.025 mA |
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Onsemi |
AVALANCHE PHOTODIODE |
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Marktech Optoelectronics |
PIN PHOTODIODE |
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First Sensor Ag |
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First Sensor Ag |
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|
Osram Opto Semiconductors |
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|
Vishay Intertechnology |
PIN PHOTODIODE |
SURFACE MOUNT |
SINGLE |
5 nA |
1 |
YES |
820 |
TR, 7 INCH |
20 V |
Silicon |
110 Cel |
20 V |
SQUARE |
-40 Cel |
AEC-Q101 |
.007 mA |
|||||||
Infineon Technologies |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
2 nA |
.00000035 s |
Photo Diodes |
32 V |
Silicon |
80 Cel |
-40 Cel |
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Kodenshi Auk |
THROUGH HOLE MOUNT |
10 nA |
Photo Diodes |
Silicon |
70 Cel |
-30 Cel |
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|
Everlight Electronics |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
SINGLE |
5 mm |
30 nA |
1 |
YES |
940 |
Photo Diodes |
32 V |
Silicon |
85 Cel |
32 V |
ROUND |
-40 Cel |
.035 mA |
|||||||
|
Everlight Electronics |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
SINGLE |
4.8 mm |
30 nA |
1 |
YES |
940 |
.00000005 s |
Photo Diodes |
20 V |
Silicon |
85 Cel |
32 V |
RECTANGULAR |
-25 Cel |
.018 mA |
||||||
|
Osram Opto Semiconductors |
PIN PHOTODIODE |
SURFACE MOUNT |
SINGLE |
.59 mm |
5 nA |
1 |
NO |
580 |
TR, 7 INCH |
16 V |
Silicon |
100 Cel |
SQUARE |
-40 Cel |
.000115 mA |
||||||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
SURFACE MOUNT |
Tin (Sn) |
SINGLE |
1.9 mm |
10 nA |
1 |
YES |
940 |
TR, 7 INCH |
Photo Diodes |
60 V |
Silicon |
85 Cel |
60 V |
ROUND |
-40 Cel |
DAYLIGHT FILTER |
e3 |
||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
SURFACE MOUNT |
Tin (Sn) |
SINGLE |
1.9 mm |
10 nA |
1 |
YES |
940 |
Photo Diodes |
60 V |
Silicon |
85 Cel |
60 V |
ROUND |
-40 Cel |
DAYLIGHT FILTER |
e3 |
|||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
SURFACE MOUNT |
SINGLE |
3 nA |
1 |
YES |
910 |
TR, 7 INCH |
20 V |
Silicon |
110 Cel |
SQUARE |
-40 Cel |
AEC-Q101 |
.0024 mA |
||||||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
||||||||||||||||||||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
SURFACE MOUNT |
SINGLE |
10 nA |
1 |
YES |
840 |
TR, 7 INCH |
20 V |
Silicon |
110 Cel |
20 V |
SQUARE |
-40 Cel |
AEC-Q101 |
.038 mA |
|||||||
|
TE Connectivity |
AVALANCHE PHOTODIODE |
PANEL MOUNT |
100 Cel |
-40 Cel |
|||||||||||||||||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
||||||||||||||||||||||
|
Onsemi |
AVALANCHE PHOTODIODE |
COMPLEX |
3.93 mm |
4000 nA |
1 |
NO |
420 |
85 Cel |
24.2 V |
SQUARE |
-40 Cel |
||||||||||||
|
Marktech Optoelectronics |
PIN PHOTODIODE |
||||||||||||||||||||||
|
Tt Electronics Plc |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
SINGLE |
4.985 mm |
60 nA |
1 |
YES |
.000000005 s |
Photo Diodes |
60 V |
Silicon |
100 Cel |
60 V |
ROUND |
-40 Cel |
.0065 mA |
|||||||
|
Tt Electronics Plc |
PIN PHOTODIODE |
SURFACE MOUNT |
SINGLE |
30 nA |
1 |
YES |
880 |
Photo Diodes |
Silicon |
125 Cel |
35 V |
ROUND |
-55 Cel |
||||||||||
|
Tt Electronics Plc |
PIN PHOTODIODE |
SURFACE MOUNT |
SINGLE |
30 nA |
1 |
YES |
880 |
Photo Diodes |
35 V |
Silicon |
125 Cel |
35 V |
SQUARE |
-55 Cel |
|||||||||
First Sensor Ag |
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|
Hamamatsu Photonics Kk |
AVALANCHE PHOTODIODE |
RADIAL MOUNT |
SINGLE |
3.6 mm |
.02 nA |
1 |
YES |
960 |
Photo Diodes |
30 V |
Silicon |
100 Cel |
SQUARE |
-40 Cel |
HIGH RELIABILITY |
.012 mA |
|||||||
Broadcom |
Photo Diodes |
85 Cel |
-40 Cel |
A photodiode is a type of electronic component that uses light to generate an electric current. It is a semiconductor device that is designed to respond to the presence of light by producing a flow of electrons. Photodiodes are widely used in a variety of applications, including in cameras, optical communication systems, and medical equipment.
Photodiodes work by converting light energy into electrical energy. When light hits the photodiode, it creates an electric current that is proportional to the intensity of the light. This current can be measured and used to determine the presence, intensity, and wavelength of the light.
Photodiodes are available in different types, each with their own characteristics and applications. The most common types of photodiodes are PIN photodiodes, avalanche photodiodes, and Schottky photodiodes.
PIN photodiodes are widely used in optical communication systems and are designed for high-speed and low-noise applications. They have a wide spectral response range and are able to detect both visible and infrared light.
Avalanche photodiodes are used in applications that require high sensitivity and low noise, such as in low-light-level imaging and spectroscopy. They are able to generate high gain and high-speed signals, making them ideal for use in low-light-level applications.
Schottky photodiodes are used in applications that require high-speed and high-frequency response, such as in microwave and millimeter-wave detection. They have a low junction capacitance and are able to detect fast-changing signals.