STMicroelectronics Flash Memory 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

M58LW064D110N6

STMicroelectronics

FLASH

INDUSTRIAL

56

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

128K

30 mA

4194304 words

3

NO

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP56,.8,20

8

Flash Memories

.5 mm

85 Cel

4MX16

4M

-40 Cel

64

YES

TIN LEAD

YES

DUAL

R-PDSO-G56

3.6 V

1.2 mm

14 mm

Not Qualified

67108864 bit

2.7 V

4/8

e0

NOR TYPE

.00004 Amp

18.4 mm

YES

110 ns

3

NO

NAND256W3A2BN6F

STMicroelectronics

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K

20 mA

33554432 words

3

NO

3/3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

Flash Memories

.5 mm

85 Cel

32MX8

32M

-40 Cel

2K

YES

TIN/TIN BISMUTH

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

268435456 bit

2.7 V

512

e3/e6

NOT SPECIFIED

260

SLC NAND TYPE

.00005 Amp

18.4 mm

12000 ns

3

NO

M29W800DT70N6E

STMicroelectronics

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

524288 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

512KX16

512K

-40 Cel

1,2,1,15

YES

TIN/TIN BISMUTH

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

8388608 bit

2.7 V

TOP BOOT BLOCK

e3/e6

NOT SPECIFIED

260

NOR TYPE

.0001 Amp

18.4 mm

YES

70 ns

3

YES

NAND512W3A2BN6E

STMicroelectronics

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K

20 mA

67108864 words

3

NO

3/3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

Flash Memories

.5 mm

85 Cel

64MX8

64M

-40 Cel

4K

YES

TIN BISMUTH

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

536870912 bit

2.7 V

512

e6

SLC NAND TYPE

.00005 Amp

18.4 mm

12000 ns

3

NO

M29W128GL70N6E

STMicroelectronics

FLASH

INDUSTRIAL

56

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

128K

20 mA

8388608 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP56,.8,20

8

Flash Memories

.5 mm

85 Cel

8MX16

8M

-40 Cel

128

YES

MATTE TIN/TIN BISMUTH

YES

DUAL

R-PDSO-G56

3.6 V

1.2 mm

14 mm

Not Qualified

134217728 bit

2.7 V

8/16

e3/e6

40

260

NOR TYPE

.0001 Amp

18.4 mm

YES

70 ns

3

YES

M29W160ET70ZA6F

STMicroelectronics

FLASH

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

1048576 words

3

YES

3/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,32

8

Flash Memories

.8 mm

85 Cel

1MX16

1M

-40 Cel

1,2,1,31

YES

TIN SILVER COPPER

YES

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

6 mm

Not Qualified

TOP

16777216 bit

2.7 V

TOP BOOT BLOCK

e1

NOR TYPE

.0001 Amp

8 mm

YES

70 ns

3

YES

M45PE80-VMP6TG

STMicroelectronics

FLASH

INDUSTRIAL

8

VSON

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

15 mA

1048576 words

3

3/3.3

8

SMALL OUTLINE, VERY THIN PROFILE

SOLCC8,.25

Flash Memories

20

1.27 mm

85 Cel

1MX8

1M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-XDSO-N8

3.6 V

1 mm

100000 Write/Erase Cycles

33 MHz

5 mm

Not Qualified

25 ms

SPI

8388608 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.00001 Amp

6 mm

2.7

M25PE16-VMW6TG

STMicroelectronics

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

15 mA

2097152 words

3

3/3.3

8

SMALL OUTLINE

SOP8,.3

Flash Memories

20

1.27 mm

85 Cel

2MX8

2M

-40 Cel

MATTE TIN

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

3.6 V

2.5 mm

100000 Write/Erase Cycles

50 MHz

5.99 mm

Not Qualified

15 ms

SPI

16777216 bit

2.7 V

e3

NOR TYPE

.00001 Amp

5.3 mm

2.7

M29DW128G70NF6E

STMicroelectronics

FLASH

INDUSTRIAL

56

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

32K,128K

15 mA

8388608 words

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP56,.8,20

Flash Memories

.5 mm

85 Cel

8MX16

8M

-40 Cel

8,62

YES

YES

DUAL

R-PDSO-G56

Not Qualified

BOTTOM/TOP

134217728 bit

8

NOR TYPE

.0001 Amp

YES

70 ns

YES

M29W320DB70N6

STMicroelectronics

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

2097152 words

3.3

YES

3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

2MX16

2M

-40 Cel

1,2,1,63

YES

TIN LEAD

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

BOTTOM

33554432 bit

3 V

BOTTOM BOOT BLOCK

e0

NOR TYPE

.0001 Amp

18.4 mm

YES

70 ns

3

YES

M29W320DB70N6F

STMicroelectronics

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

2097152 words

3.3

YES

3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

2MX16

2M

-40 Cel

1,2,1,63

YES

TIN/TIN BISMUTH

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

BOTTOM

33554432 bit

3 V

BOTTOM BOOT BLOCK

e3/e6

NOT SPECIFIED

260

NOR TYPE

.0001 Amp

18.4 mm

YES

70 ns

3

YES

M45PE20-VMN6P

STMicroelectronics

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

15 mA

262144 words

3

3/3.3

8

SMALL OUTLINE

SOP8,.25

Flash Memories

20

1.27 mm

85 Cel

256KX8

256K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

3.6 V

1.75 mm

100000 Write/Erase Cycles

33 MHz

3.9 mm

Not Qualified

SPI

2097152 bit

2.7 V

e4

NOR TYPE

.00001 Amp

4.9 mm

2.7

M25P64-VMF6G

STMicroelectronics

FLASH

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

20 mA

8388608 words

3

3/3.3

8

SMALL OUTLINE

SOP16,.4

Flash Memories

20

1.27 mm

85 Cel

8MX8

8M

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G16

3.6 V

2.65 mm

100000 Write/Erase Cycles

50 MHz

7.5 mm

Not Qualified

15 ms

SPI

67108864 bit

2.7 V

10

260

NOR TYPE

.00005 Amp

10.3 mm

2.7

M25PE80-VMN6P

STMicroelectronics

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

15 mA

1048576 words

3

3/3.3

8

SMALL OUTLINE

SOP8,.25

Flash Memories

20

1.27 mm

85 Cel

1MX8

1M

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

3.6 V

1.75 mm

100000 Write/Erase Cycles

50 MHz

3.9 mm

Not Qualified

23 ms

SPI

8388608 bit

2.7 V

e4

NOR TYPE

.00001 Amp

4.9 mm

2.7

M29W800FB70N3F

STMicroelectronics

FLASH

AUTOMOTIVE

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

524288 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

125 Cel

512KX16

512K

-40 Cel

1,2,1,15

YES

MATTE TIN/TIN BISMUTH

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

BOTTOM

8388608 bit

2.7 V

BOTTOM BOOT BLOCK

e3/e6

40

260

NOR TYPE

.0001 Amp

18.4 mm

YES

70 ns

3

YES

M25PE40VMP6TG

STMicroelectronics

FLASH

INDUSTRIAL

8

VSON

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

15 mA

524288 words

3

3/3.3

8

SMALL OUTLINE, VERY THIN PROFILE

SOLCC8,.25

Flash Memories

20

1.27 mm

85 Cel

512KX8

512K

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-XDSO-N8

3.6 V

1 mm

100000 Write/Erase Cycles

50 MHz

5 mm

Not Qualified

25 ms

SPI

4194304 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.00001 Amp

6 mm

2.7

M28F512-12B1

STMicroelectronics

FLASH

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

65536 words

5

NO

5

8

IN-LINE

DIP32,.6

Flash Memories

2.54 mm

70 Cel

3-STATE

64KX8

64K

0 Cel

YES

MATTE TIN

DUAL

R-PDIP-T32

5.5 V

5.08 mm

10000 Write/Erase Cycles

15.24 mm

Not Qualified

524288 bit

4.5 V

10K ERASE/PROGRAM CYCLES

e3

NOR TYPE

.0001 Amp

41.91 mm

12 ns

12

NO

M29F040B70N6

STMicroelectronics

FLASH

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

64K

20 mA

524288 words

5

YES

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

Flash Memories

.5 mm

85 Cel

512KX8

512K

-40 Cel

8

YES

TIN LEAD

DUAL

R-PDSO-G32

5.5 V

1.2 mm

100000 Write/Erase Cycles

8 mm

Not Qualified

4194304 bit

4.5 V

e0

NOR TYPE

.0001 Amp

18.4 mm

70 ns

5

YES

M29F200BB45N1

STMicroelectronics

FLASH

COMMERCIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

131072 words

5

YES

5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

70 Cel

128KX16

128K

0 Cel

1,2,1,3

YES

TIN LEAD

YES

DUAL

R-PDSO-G48

5.5 V

1.2 mm

100000 Write/Erase Cycles

12 mm

Not Qualified

BOTTOM

2097152 bit

4.5 V

BOTTOM BOOT BLOCK

e0

NOR TYPE

.0001 Amp

18.4 mm

45 ns

5

YES

M29W800DB90N6T

STMicroelectronics

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

524288 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

512KX16

512K

-40 Cel

1,2,1,15

YES

TIN LEAD

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

BOTTOM

8388608 bit

2.7 V

BOTTOM BOOT BLOCK

e0

NOR TYPE

.0001 Amp

18.4 mm

YES

90 ns

3

YES

M29W800DT45N6E

STMicroelectronics

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

524288 words

3.3

YES

3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

512KX16

512K

-40 Cel

1,2,1,15

YES

TIN/TIN BISMUTH

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

8388608 bit

3 V

e3/e6

NOT SPECIFIED

260

NOR TYPE

.0001 Amp

18.4 mm

YES

45 ns

3

YES

M29W800DT70M6

STMicroelectronics

FLASH

INDUSTRIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

524288 words

3

YES

3/3.3

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

85 Cel

512KX16

512K

-40 Cel

1,2,1,15

YES

TIN LEAD

YES

DUAL

R-PDSO-G44

3.6 V

2.8 mm

13.3 mm

Not Qualified

TOP

8388608 bit

2.7 V

TOP BOOT BLOCK

e0

NOR TYPE

.0001 Amp

28.2 mm

YES

70 ns

3

YES

M29W800DT90N6

STMicroelectronics

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

524288 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

512KX16

512K

-40 Cel

1,2,1,15

YES

TIN LEAD

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

8388608 bit

2.7 V

TOP BOOT BLOCK

e0

NOR TYPE

.0001 Amp

18.4 mm

YES

90 ns

3

YES

M45PE40VMP6G

STMicroelectronics

FLASH

INDUSTRIAL

8

VSON

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

15 mA

524288 words

3

3/3.3

8

SMALL OUTLINE, VERY THIN PROFILE

SOLCC8,.25

Flash Memories

20

1.27 mm

85 Cel

512KX8

512K

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-XDSO-N8

3.6 V

1 mm

100000 Write/Erase Cycles

33 MHz

5 mm

Not Qualified

25 ms

SPI

4194304 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.00001 Amp

6 mm

2.7

M58LW064D110N6E

STMicroelectronics

FLASH

INDUSTRIAL

56

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

128K

30 mA

4194304 words

3

NO

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP56,.8,20

8

Flash Memories

.5 mm

85 Cel

4MX16

4M

-40 Cel

64

YES

YES

DUAL

R-PDSO-G56

3.6 V

1.2 mm

14 mm

Not Qualified

67108864 bit

2.7 V

4/8

NOT SPECIFIED

260

NOR TYPE

.00004 Amp

18.4 mm

YES

110 ns

3

NO

M58LW064D110N6F

STMicroelectronics

FLASH

INDUSTRIAL

56

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

128K

30 mA

4194304 words

3

NO

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP56,.8,20

8

Flash Memories

.5 mm

85 Cel

4MX16

4M

-40 Cel

64

YES

YES

DUAL

R-PDSO-G56

3.6 V

1.2 mm

14 mm

Not Qualified

67108864 bit

2.7 V

4/8

NOT SPECIFIED

260

NOR TYPE

.00004 Amp

18.4 mm

YES

110 ns

3

NO

M58LW064D110N6P

STMicroelectronics

FLASH

INDUSTRIAL

56

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

4194304 words

3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

.5 mm

85 Cel

4MX16

4M

-40 Cel

DUAL

R-PDSO-G56

3.6 V

1.2 mm

14 mm

Not Qualified

67108864 bit

2.7 V

NOR TYPE

18.4 mm

110 ns

3

NAND512W3A0AN6

STMicroelectronics

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K

20 mA

67108864 words

3

NO

3/3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

Flash Memories

.5 mm

85 Cel

64MX8

64M

-40 Cel

4K

YES

TIN LEAD

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

536870912 bit

2.7 V

512

e0

SLC NAND TYPE

.00005 Amp

18.4 mm

35 ns

3

NO

NAND512W3A0AN6E

STMicroelectronics

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K

20 mA

67108864 words

3

NO

3/3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

Flash Memories

.5 mm

85 Cel

64MX8

64M

-40 Cel

4K

YES

TIN/TIN BISMUTH

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

536870912 bit

2.7 V

512

e3/e6

NOT SPECIFIED

260

SLC NAND TYPE

.00005 Amp

18.4 mm

35 ns

3

NO

NAND512W3A0AV6E

STMicroelectronics

FLASH

INDUSTRIAL

48

VSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K

20 mA

67108864 words

3

NO

3/3.3

8

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

TSSOP48,.71,20

Flash Memories

.5 mm

85 Cel

64MX8

64M

-40 Cel

4K

YES

YES

DUAL

R-PDSO-G48

3.6 V

.65 mm

12 mm

Not Qualified

536870912 bit

2.7 V

512

NOT SPECIFIED

NOT SPECIFIED

SLC NAND TYPE

.00005 Amp

15.4 mm

35 ns

3

NO

M25P10-AVMN6

STMicroelectronics

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

15 mA

131072 words

3

3/3.3

8

SMALL OUTLINE

SOP8,.25

EEPROMs

20

1.27 mm

85 Cel

128KX8

128K

-40 Cel

TIN LEAD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

3.6 V

1.75 mm

100000 Write/Erase Cycles

50 MHz

3.9 mm

Not Qualified

SPI

1048576 bit

2.7 V

40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST

e0

NOR TYPE

.000005 Amp

4.9 mm

2.7

M25P10-AVMN6T

STMicroelectronics

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

15 mA

131072 words

3

3/3.3

8

SMALL OUTLINE

SOP8,.25

EEPROMs

20

1.27 mm

85 Cel

128KX8

128K

-40 Cel

TIN LEAD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

3.6 V

1.75 mm

100000 Write/Erase Cycles

50 MHz

3.9 mm

Not Qualified

SPI

1048576 bit

2.7 V

40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST

e0

NOR TYPE

.000005 Amp

4.9 mm

2.7

M25P32-VMW6TP

STMicroelectronics

FLASH

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

15 mA

4194304 words

3

3/3.3

8

SMALL OUTLINE

SOP8,.3

Flash Memories

20

1.27 mm

85 Cel

4MX8

4M

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

3.6 V

2.5 mm

100000 Write/Erase Cycles

20 MHz

5.62 mm

Not Qualified

SPI

33554432 bit

2.7 V

e4

NOR TYPE

.00001 Amp

5.62 mm

2.7

M25P40-VMP6G

STMicroelectronics

FLASH

INDUSTRIAL

8

SON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

15 mA

524288 words

3

2.5/3.3

8

SMALL OUTLINE

SOLCC8,.25

Flash Memories

20

1.27 mm

85 Cel

512KX8

512K

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-N8

3.6 V

1 mm

100000 Write/Erase Cycles

50 MHz

5 mm

Not Qualified

SPI

4194304 bit

2.7 V

40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.00001 Amp

6 mm

2.7

M25P40-VMP6TG

STMicroelectronics

FLASH

INDUSTRIAL

8

SON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

15 mA

524288 words

3

2.5/3.3

8

SMALL OUTLINE

SOLCC8,.25

Flash Memories

20

1.27 mm

85 Cel

512KX8

512K

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-N8

3.6 V

1 mm

100000 Write/Erase Cycles

50 MHz

5 mm

Not Qualified

SPI

4194304 bit

2.7 V

40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.00001 Amp

6 mm

2.7

M28F512-15XB1

STMicroelectronics

FLASH

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

65536 words

5

NO

5

8

IN-LINE

DIP32,.6

Flash Memories

2.54 mm

70 Cel

3-STATE

64KX8

64K

0 Cel

YES

TIN LEAD

DUAL

R-PDIP-T32

5.25 V

5.08 mm

10000 Write/Erase Cycles

15.24 mm

Not Qualified

524288 bit

4.75 V

e0

NOR TYPE

.0001 Amp

41.91 mm

15 ns

12

NO

M29W320EB70ZE6

STMicroelectronics

FLASH

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

8K,64K

20 mA

2097152 words

3

YES

3/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,32

8

Flash Memories

.8 mm

85 Cel

2MX16

2M

-40 Cel

8,63

YES

TIN LEAD

YES

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

6 mm

Not Qualified

BOTTOM

33554432 bit

2.7 V

e0

NOR TYPE

.0001 Amp

8 mm

YES

70 ns

3

YES

M29W400DB55N6E

STMicroelectronics

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

20

.5 mm

85 Cel

3-STATE

256KX16

256K

-40 Cel

1,2,1,7

YES

TIN

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

100000 Write/Erase Cycles

12 mm

Not Qualified

BOTTOM

4194304 bit

2.7 V

BOTTOM BOOT BLOCK

e3

NOR TYPE

.0001 Amp

18.4 mm

55 ns

3

YES

M29W640FB70N6F

STMicroelectronics

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8K,64K

20 mA

4194304 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

4MX16

4M

-40 Cel

8,127

YES

TIN/TIN BISMUTH

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

BOTTOM

67108864 bit

2.7 V

4/8

e3/e6

40

260

NOR TYPE

.0001 Amp

18.4 mm

YES

70 ns

3

YES

M58BW32FB4ZA3F

STMicroelectronics

FLASH

AUTOMOTIVE

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

PARALLEL

SYNCHRONOUS

4K,2K,16K

50 mA

524288 words

3.3

NO

3/3.3

32

GRID ARRAY, LOW PROFILE

BGA80,8X10,40

Flash Memories

1 mm

125 Cel

512KX32

512K

-40 Cel

4,8,62

YES

BOTTOM

R-PBGA-B80

3.6 V

1.7 mm

10 mm

Not Qualified

BOTTOM

16777216 bit

2.7 V

4

NOR TYPE

.00015 Amp

12 mm

YES

45 ns

3.3

NO

NAND512W3A2BZA6E

STMicroelectronics

FLASH

INDUSTRIAL

63

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

16K

20 mA

67108864 words

3

NO

3/3.3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA63,10X12,32

Flash Memories

.8 mm

85 Cel

64MX8

64M

-40 Cel

4K

YES

YES

BOTTOM

R-PBGA-B63

3.6 V

1.05 mm

9 mm

Not Qualified

536870912 bit

2.7 V

512

NOT SPECIFIED

NOT SPECIFIED

SLC NAND TYPE

.00005 Amp

11 mm

12000 ns

3

NO

M25P80-VMN3TP

STMicroelectronics

FLASH

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

15 mA

1048576 words

3

3/3.3

8

SMALL OUTLINE

SOP8,.25

Flash Memories

20

1.27 mm

125 Cel

1MX8

1M

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

3.6 V

1.75 mm

100000 Write/Erase Cycles

50 MHz

3.9 mm

Not Qualified

15 ms

SPI

8388608 bit

2.7 V

e4

NOR TYPE

.00001 Amp

4.9 mm

2.7

M25P80-VMN3TP/4

STMicroelectronics

FLASH

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

15 mA

1048576 words

3/3.3

8

SMALL OUTLINE

SOP8,.25

Flash Memories

20

1.27 mm

125 Cel

1MX8

1M

-40 Cel

MATTE TIN

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

10000 Write/Erase Cycles

25 MHz

Not Qualified

SPI

8388608 bit

e3

NOR TYPE

.0001 Amp

M29F800DB70M6E

STMicroelectronics

FLASH

INDUSTRIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

524288 words

5

YES

5

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

85 Cel

512KX16

512K

-40 Cel

1,2,1,15

YES

TIN/NICKEL PALLADIUM GOLD

YES

DUAL

R-PDSO-G44

5.5 V

2.8 mm

13.3 mm

Not Qualified

BOTTOM

8388608 bit

4.5 V

BOTTOM BOOT BLOCK

e3/e4

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.00015 Amp

28.2 mm

YES

70 ns

5

YES

M29W160ET70ZA6

STMicroelectronics

FLASH

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

1048576 words

3

YES

3/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,32

8

Flash Memories

.8 mm

85 Cel

1MX16

1M

-40 Cel

1,2,1,31

YES

YES

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

6 mm

Not Qualified

TOP

16777216 bit

2.7 V

TOP BOOT BLOCK

NOR TYPE

.0001 Amp

8 mm

YES

70 ns

3

YES

M29W320DB70N6T

STMicroelectronics

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

2097152 words

3.3

YES

3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

2MX16

2M

-40 Cel

1,2,1,63

YES

TIN LEAD

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

BOTTOM

33554432 bit

3 V

BOTTOM BOOT BLOCK

e0

NOR TYPE

.0001 Amp

18.4 mm

YES

70 ns

3

YES

M29W320ET70N6E

STMicroelectronics

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8K,64K

20 mA

2097152 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

2MX16

2M

-40 Cel

8,63

YES

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

33554432 bit

2.7 V

e3/e6

260

NOR TYPE

.0001 Amp

18.4 mm

YES

70 ns

3

YES

NAND512W3A2DZA6E

STMicroelectronics

FLASH

INDUSTRIAL

63

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

67108864 words

3

8

GRID ARRAY

85 Cel

64MX8

64M

-40 Cel

BOTTOM

R-PBGA-B63

3.6 V

Not Qualified

536870912 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

SLC NAND TYPE

12000 ns

3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.